PHN203 NXP Semiconductors, PHN203 Datasheet
PHN203
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PHN203 Summary of contents
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... Pinning - SOT96-1 (SO8), simplified outline and symbol Pin Description 1 source1 (s1) 2 gate1 (g1) 3 source2 (s2) 4 gate2 (g2) 5,6 drain2 (d2) 7,8 drain1 (d1) PHN203 Dual N-channel TrenchMOS™ logic level FET Rev. 03 — 26 January 2004 Logic level threshold Fast switching DC-to-DC converters tot Simplified outline 8 1 ...
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... 0.2 ms starting T GS Rev. 03 — 26 January 2004 Dual N-channel TrenchMOS™ logic level FET Min - = [ Figure 2 and [ Figure [ Figure [ Figure [ [ 8 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. PHN203 Version SOT96-1 Max Unit 6 +150 C +150 4 ...
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... Dual N-channel TrenchMOS™ logic level FET 03aa11 120 I der (%) 80 40 150 200 T amb ( C) I der Fig 2. Normalized continuous drain current Rev. 03 — 26 January 2004 100 150 T amb ( ------------------- = 100 function of ambient temperature 100 (V) © Koninklijke Philips Electronics N.V. 2004. All rights reserved. PHN203 03aa19 200 03an69 ...
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... Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration. 9397 750 12541 Product data Dual N-channel TrenchMOS™ logic level FET Conditions mounted on a printed-circuit board; minimum footprint Rev. 03 — 26 January 2004 PHN203 Min Typ Max - - 62 Figure 4 03an68 (s) © ...
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... Dual N-channel TrenchMOS™ logic level FET Conditions I = 250 mA Figure 150 150 Figure 7 and 150 4 3.5 A; Figure 7 and MHz Figure 1. Figure /dt = 100 Rev. 03 — 26 January 2004 PHN203 Min Typ Max 1 100 40 Figure 560 - - 125 - - 0. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Unit ...
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... Dual N-channel TrenchMOS™ logic level FET > DSon 150 and 150 DSon function of gate-source voltage; typical values 1.5 1 0 120 R DSon = ---------------------------- - R DSon 25 C factor as a function of junction temperature. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. PHN203 03ae49 (V) 03ad57 180 ...
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... Product data 03aa33 ( 120 180 Fig 10. Sub-threshold drain current as a function (pF Rev. 03 — 26 January 2004 Dual N-channel TrenchMOS™ logic level FET min typ max ( gate-source voltage. 03ae52 C iss C oss C rss (V) © Koninklijke Philips Electronics N.V. 2004. All rights reserved. PHN203 03aa36 ...
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... Product data Dual N-channel TrenchMOS™ logic level FET 03ae51 ( 0 Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 03 — 26 January 2004 PHN203 03ae53 (nC © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...
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... EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2004. All rights reserved. PHN203 SOT96 ( 0.7 0 0.028 0.004 0.012 ISSUE DATE 99-12-27 03-02- ...
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... Philips Semiconductors 8. Revision history Table 6: Revision history Rev Date CPCN Description 03 20040126 HZG469 Product data (9397 750 12541); supersedes Product specification PHN203 Rev 1.000 of January 1999 Modifications: • • • • • • • • • • • • ...
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... Trademarks TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 03 — 26 January 2004 Rev. 03 — 26 January 2004 PHN203 PHN203 Fax: + 24825 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 26 January 2004 Document order number: 9397 750 12541 Dual N-channel TrenchMOS™ logic level FET PHN203 ...