PHP125 Philips Semiconductors, PHP125 Datasheet

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PHP125

Manufacturer Part Number
PHP125
Description
P-channel enhancement mode MOS transistor
Manufacturer
Philips Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PHP125
Manufacturer:
PHILIPS/飞利浦
Quantity:
20 000
Part Number:
PHP125N06LT
Manufacturer:
NXP
Quantity:
12 500
Part Number:
PHP125N06T
Manufacturer:
NXP
Quantity:
12 500
Product specification
Supersedes data of 1996 Apr 02
File under Discrete Semiconductors, SC13b
DATA SHEET
PHP125
P-channel enhancement mode
MOS transistor
DISCRETE SEMICONDUCTORS
1997 Jun 18

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PHP125 Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET PHP125 P-channel enhancement mode MOS transistor Product specification Supersedes data of 1996 Apr 02 File under Discrete Semiconductors, SC13b 1997 Jun 18 ...

Page 2

... DESCRIPTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. CONDITIONS Product specification n.c. s MAM115 Fig.1 Simplified outline and symbol. CAUTION MIN. MAX 0.25 2.8 PHP125 UNIT ...

Page 3

... C; note 4 amb note 2 (ambient to tie-point) of 27.5 K/W. th a-tp (ambient to tie-point K/W. th a-tp MBG848 10 handbook, halfpage 150 200 0.01; T (1) R DSon limitation 3 Product specification MIN. MAX 2.5 10 2.8 2.4 1.1 65 +150 65 +150 ( ( Fig.3 SOAR. PHP125 UNIT MBG752 100 100 ...

Page 4

... (K/W) = 0.75 0.5 10 0.33 0.2 0.1 0.05 1 0.02 0. Fig.4 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values. 1997 Jun 18 PARAMETER Product specification PHP125 VALUE 25 MBG753 (s) UNIT K/W 1 ...

Page 5

... SD t reverse recovery time rr 1997 Jun 18 CONDITIONS 4 0 MHz MHz MHz gen gen 1. 1.25 A; di/dt = 100 Product specification PHP125 MIN. TYP. MAX. UNIT 2.8 V 100 nA 100 nA 0.33 0.4 0.22 0.25 250 pF 140 4 1.6 V 150 200 ns ...

Page 6

... Q g (nC) T MBG757 handbook, halfpage (V) V (1) T (2) T (3) T Fig (A) 7 Fig.6 Output characteristics; typical values (A) 6 (1) ( 0.4 0.8 1.2 1 150 Source current as a function of source-drain diode forward voltage; typical values. Product specification PHP125 MBG756 (V) MBG758 ( (V) ...

Page 7

... Fig.11 Switching time test circuit and input and output waveforms. 1997 Jun 18 MBG849 handbook, halfpage (V) V Fig.10 Capacitance as a function of drain-source out 0 V out d(on 600 C (pF) 400 200 MHz voltage; typical values d(off off MGD391 Product specification PHP125 MBG850 C iss C oss C rss (V) ...

Page 8

... Fig.12 Temperature coefficient of gate-source threshold voltage; typical values. 1997 Jun 18 MBG759 1.8 handbook, halfpage k 1.6 1.4 1.2 1.0 0.8 0.6 125 175 DSon k = ---------------------------------------- - R DSon ( ( 0 Fig.13 Temperature coefficient of drain-source 8 Product specification PHP125 (1) ( 125 Typical R at: DSon 4 on-resistance; typical values. MBG760 175 o C) ...

Page 9

... REFERENCES JEDEC EIAJ MS-012AA detail 1.0 0.7 1.05 0.25 0.25 0.4 0.6 0.039 0.028 0.041 0.01 0.01 0.016 0.024 EUROPEAN PROJECTION Product specification PHP125 SOT96 ( 0.7 0.1 0 0.028 0.004 0.012 ISSUE DATE 95-02-04 97-05-22 ...

Page 10

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Jun 18 10 Product specification PHP125 ...

Page 11

... Philips Semiconductors P-channel enhancement mode MOS transistor 1997 Jun 18 NOTES 11 Product specification PHP125 ...

Page 12

... Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel ...

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