M29W400DB55ZE1T STMicroelectronics, M29W400DB55ZE1T Datasheet
M29W400DB55ZE1T
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M29W400DB55ZE1T Summary of contents
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Features Supply voltage – 2 3.6 V for Program, Erase CC and Read Access time: 45, 55 Programming time – 10 µs per byte/word typical 11 memory blocks – 1 boot block (top or ...
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Contents Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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M29W400DT, M29W400DB 4.6 Unlock Bypass Reset command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.7 ...
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List of tables List of tables Table 1. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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M29W400DT, M29W400DB List of figures Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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Description 1 Description The M29W400D Mbit (512 256 Kb x 16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 ...
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M29W400DT, M29W400DB Figure 1. Logic diagram Table 1. Signal names Signal name A0-A17 DQ0-DQ7 DQ8-DQ14 DQ15A– BYTE A0-A17 W M29W400DT E M29W400DB Function ...
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Description Figure 2. SO connections Not connected. 8/ A17 ...
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M29W400DT, M29W400DB Figure 3. TSOP connections Not connected. A15 1 48 A14 A13 A12 A11 A10 M29W400DT M29W400DB A17 ...
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Description Figure 4. TFBGA connections (top view through package Not connected. 10/ A17 ...
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M29W400DT, M29W400DB Figure 5. Block addresses (x 8) M29W400DT Top boot block addresses (x 8) 7FFFFh 16 Kbyte 7C000h 7BFFFh 8 Kbyte 7A000h 79FFFh 8 Kbyte 78000h 77FFFh 32 Kbyte 70000h 6FFFFh 64 Kbyte 60000h 1FFFFh 64 Kbyte 10000h 0FFFFh ...
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Description Figure 6. Block addresses (x 16) M29W400DT Top boot block addresses (x 16) 3FFFFh 8 Kword 3E000h 3DFFFh 4 Kword 3D000h 3CFFFh 4 Kword 3C000h 3BFFFh 16 Kword 38000h 37FFFh 32 Kword 30000h 0FFFFh 32 Kword 08000h 07FFFh 32 ...
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M29W400DT, M29W400DB 2 Signal descriptions See Figure 1: Logic this device. 2.1 Address inputs (A0-A17) The Address inputs select the cells in the memory array to access during Bus Read operations. During Bus Write operations they control the commands sent ...
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Signal descriptions 2.7 Write Enable (W) The Write Enable, W, controls the Bus Write operation of the memory’s command interface. 2.8 Reset/Block Temporary Unprotect (RP) The Reset/Block Temporary Unprotect pin can be used to apply a hardware reset to the ...
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M29W400DT, M29W400DB 2.11 V supply voltage CC The V supply voltage supplies the power for all operations (Read, Program, Erase etc.). CC The command interface is disabled when the V voltage This prevents Bus Write operations from accidentally ...
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Bus operations 3 Bus operations There are five standard bus operations that control the device. These are Bus Read, Bus Write, Output Disable, Standby and Automatic Standby. See operations, for a summary. Typically glitches of less than ...
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M29W400DT, M29W400DB 3.6 Special bus operations Additional bus operations can be performed to read the electronic signature and also to apply and remove block protection. These bus operations are intended for use by programming equipment and are not usually used ...
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Bus operations Table 3. Bus operations, BYTE = V Operation Bus Read Bus Write Output Disable Standby Read manufacturer code Read device code 18/48 IH Address inputs A0-A17 ...
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... From the Auto Select mode the manufacturer code can be read using a Bus Read operation with and manufacturer code for STMicroelectronics is 0020h. The device code can be read using a Bus Read operation with other address bits may be set to either V 00EEh and for the M29W400DB is 00EFh. ...
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Command interface During the program operation the memory will ignore all commands not possible to issue any command to abort or pause the operation. Typical program times are given in Table 4: Program, Erase times and Program, Erase ...
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M29W400DT, M29W400DB within about 100 µs, leaving the data unchanged. No error condition is given when protected blocks are ignored. During the erase operation the memory will ignore all commands not possible to issue any command to abort ...
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Command interface will be suspended. If the Erase Suspend command is issued during the period when the memory is waiting for an additional block (before the Program/Erase controller starts) then the Erase is suspended immediately and will start immediately when ...
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M29W400DT, M29W400DB Table 5. Commands, 16-bit mode, BYTE = V Command 1st Addr 1 X Read/Reset 3 555 Auto Select 3 555 Program 4 555 Unlock Bypass 3 555 Unlock Bypass 2 X Program Unlock Bypass 2 X Reset Chip ...
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Status Register 5 Status Register Bus Read operations from any address always read the Status Register during Program and Erase operations also read during Erase Suspend when an address within a block being erased is accessed. The bits ...
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M29W400DT, M29W400DB 5.3 Error bit (DQ5) The Error bit can be used to identify errors detected by the Program/Erase controller. The Error bit is set to ’1’ when a Program, Block Erase or Chip Erase operation fails to write the ...
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Status Register Table 7. Status Register bits Operation Block Erase before timeout Block Erase Erase Suspend Erase Error 1. Unspecified data bits should be ignored. Figure 7. Data polling flowchart 26/48 (1) (continued) Address DQ7 DQ6 Erasing block 0 Toggle ...
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M29W400DT, M29W400DB Figure 8. Data toggle flowchart START READ DQ6 READ DQ5 & DQ6 DQ6 NO = TOGGLE YES NO DQ5 = 1 YES READ DQ6 TWICE DQ6 NO = TOGGLE YES FAIL PASS AI01370C Status Register 27/48 ...
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... These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. ...
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M29W400DT, M29W400DB 7 DC and AC parameters This section summarizes the operating measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC characteristics tables that follow, are derived from tests performed under ...
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DC and AC parameters Table 10. Device capacitance Symbol C Input capacitance IN C Output capacitance OUT 1. Sampled only, not 100% tested. Table 11. DC characteristics Symbol I Input Leakage current LI I Output Leakage current LO I Supply ...
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M29W400DT, M29W400DB Table 12. Read AC characteristics Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Output Valid AVQV ACC ( Chip Enable Low to Output Transition ELQX LZ t ...
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DC and AC parameters Figure 12. Write AC waveforms, Write Enable controlled A0-A17/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHEL RB Table 13. Write AC characteristics, Write Enable controlled Symbol Alt t t Address Valid to Next Address ...
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M29W400DT, M29W400DB Figure 13. Write AC waveforms, Chip Enable controlled A0-A17/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHWL RB Table 14. Write AC characteristics, Chip Enable controlled Symbol Alt t t Address Valid to Next Address Valid AVAV ...
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DC and AC parameters Figure 14. Reset/Block Temporary Unprotect AC waveforms tPLPX RP Table 15. Reset/Block Temporary Unprotect AC characteristics Symbol Alt (1) t PHWL RP High to Write Enable Low, Chip Enable t t PHEL ...
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M29W400DT, M29W400DB 8 Package mechanical Figure 15. SO44 - 44 lead plastic small outline, 525 mils body width, package outline b 1. Drawing is not to scale. Table 16. SO44 – 44 lead plastic small outline, 525 mils body width, ...
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Package mechanical Figure 16. TSOP48 – 48 lead plastic thin small outline mm, package outline DIE 1. Drawing is not to scale. Table 17. TSOP48 – 48 lead plastic thin small outline ...
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M29W400DT, M29W400DB Figure 17. TFBGA48 mm active ball array, 0.80 mm pitch, bottom view package outline 1. Drawing is not to scale. Table 18. TFBGA48 mm active ball ...
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Package mechanical Figure 18. TFBGA48 mm active ball array, 0.80 mm pitch, bottom view package outline 1. Drawing is not to scale. Table 19. TFBGA48 mm active ball ...
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M29W400DT, M29W400DB 9 Part numbering Table 20. Ordering information scheme Example: Device type M29 Operating voltage 2 Device Function 400D = 4 Mbit (512 256 Kb x 16), ...
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Block address table Appendix A Block address table Table 21. Top boot block addresses M29W400DT # Size (Kbytes ...
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... Unlike the command interface of the Program/Erase controller, the techniques for protecting and unprotecting blocks change between different Flash memory suppliers. For example, the techniques for AMD parts will not work on STMicroelectronics parts. Care should be taken when changing drivers for one part to work on another. ...
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Block protection Table 23. Programmer technique bus operations, BYTE = V Operation Block Protect Chip Unprotect Block Protection Verify Block Unprotection Verify 42/48 Address inputs A12-A17 block address ...
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M29W400DT, M29W400DB Figure 19. Programmer equipment block protect flowchart START ADDRESS = BLOCK ADDRESS Wait 4 µ Wait 100 ...
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Block protection Figure 20. Programmer equipment chip unprotect flowchart NO 44/48 START PROTECT ALL BLOCKS CURRENT BLOCK = 0 A6, A12, A15 = Wait 4 µ ...
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M29W400DT, M29W400DB Figure 21. In-system equipment block protect flowchart START WRITE 60h ADDRESS = BLOCK ADDRESS WRITE 60h ADDRESS ...
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Block protection Figure 22. In-system equipment chip unprotect flowchart 46/48 START PROTECT ALL BLOCKS CURRENT BLOCK = WRITE 60h ANY ADDRESS WITH ...
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M29W400DT, M29W400DB 10 Revision history Table 24. Document revision history Date Revision 26-Jul-2002 19-Feb-2003 28-May-2003 30-Sep-2003 6-Oct-2003 16-Jan-2004 8-Jun-2004 07-Aug-2007 01 Initial release Revision numbering modified: a minor revision will be indicated by incrementing the digit after the dot, and ...
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... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...