AM29LV640MB110RPCI Advanced Micro Devices, AM29LV640MB110RPCI Datasheet

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AM29LV640MB110RPCI

Manufacturer Part Number
AM29LV640MB110RPCI
Description
Manufacturer
Advanced Micro Devices
Datasheet
Am29LV800T/Am29LV800B
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit)
CMOS 3.0 Volt-only, Sectored Flash Memory
DISTINCTIVE CHARACTERISTICS
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Single power supply operation
— Extended voltage range: 2.7 to 3.6 volt read and
— Standard voltage range: 3.0 to 3.6 volt read and
High performance
— Extended voltage range: access times as fast as
— Standard voltage range: access times as fast as
Ultra low power consumption
— Automatic Sleep Mode: 200 nA typical
— Standby mode: 200 nA typical
— Read mode: 2 mA/MHz typical
— Program/erase mode: 20 mA typical
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
— One 8 Kword, two 4 Kword, one 16 Kword, and
— Supports control code and data storage on a
— Sector Protection features:
Top or bottom boot block configurations
available
write operations for battery-powered
applications
write operations and for compatibility with high
performance 3.3 volt microprocessors
100 ns
90 ns
fifteen 64 Kbyte sectors (byte mode)
fifteen 32 Kword sectors (word mode)
single device
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
PRELIMINARY
Refer to AMD’s Website (www.amd.com) for the latest information.
Embedded Algorithms
— Embedded Erase algorithms automatically
— Embedded Program algorithms automatically
Minimum 100,000 write cycle guarantee per
sector
Package options
— 48-pin TSOP
— 44-pin SO
Compatibility with JEDEC standards
— Pinout and software compatible with single-
— Superior inadvertent write protection
Data Polling and toggle bits
— Provides a software method of detecting
Ready/Busy pin (RY/BY)
— Provides a hardware method of detecting
Erase suspend/resume commands
— Suspends the erase operation to read data from
Hardware reset pin (RESET)
— Hardware method to reset the device to the read
preprogram and erase the entire chip or any
combination of designated sectors
write and verify bytes or words at specified
addresses
power supply Flash
program or erase operation completion
program or erase cycle completion
or program data to another sector, then resumes
the erase operation
mode
Publication# 20478
Issue Date: November 1997
Rev: D Amendment/0

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AM29LV640MB110RPCI Summary of contents

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... Top or bottom boot block configurations available This document contains information on a product under development at Advanced Micro Devices. The information is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed product without notice. ...

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GENERAL DESCRIPTION The Am29LV800 Mbit, 3.0 Volt-only Flash mem- ory organized as 1 Mbyte of 8 bits each or 512K words of 16 bits each. For flexible erase and program capabil- ity, the 8 Mbits of data ...

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Flexible Sector Architecture One 8 Kword, two 4 Kwords, one 16 Kword, and fifteen 32 Kwords sectors in word mode One 16 Kbyte, two 8 Kbytes, one 32 Kbyte, and fifteen 64 Kbyte sectors in byte mode (x8) Address Range ...

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PRODUCT SELECTOR GUIDE Family Part Number Ordering Part Number 3.0–3 2.7–3 Max access time (ns) CE access time (ns) OE access time (ns) BLOCK DIAGRAM RY/ RESET State ...

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CONNECTION DIAGRAMS RESET RY/BY A18 A17 A10 A11 A4 7 ...

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CONNECTION DIAGRAMS A15 1 A14 2 A13 3 A12 4 A11 5 A10 RESET RY/BY 15 A18 16 A17 ...

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PIN CONFIGURATION A0–A18 = 19 addresses DQ0–DQ14 = 15 data inputs/outputs DQ15/A-1 = DQ15 data input/output (word mode), A-1 (LSB address input, byte mode) BYTE = Selects 8-bit or 16-bit mode CE = Chip enable OE = Output enable WE ...

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ORDERING INFORMATION Standard Products AMD standard products are available in several packages and operating ranges. The order number (Valid Combi- nation) is formed by a combination of the elements below. Am29LV800 T -90R Valid Combinations Am29LV800T-90R, Am29LV800B-90R EC, EI, FC, ...

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Table 1. Am29LV800 User Bus Operations (BYTE = V Operation Autoselect, Manufacturer Code (Note 1) Autoselect Device Code (Note 1) Read Standby Output Disable Write Enable Sector Protect (Note 3) Verify Sector Protect (Note 4) Temporary Sector Unprotect Reset Table ...

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USER BUS OPERATIONS Read Mode The Am29LV800 has three control functions which must be satisfied in order to obtain data at the outputs the power control and should be used for device selection ( ...

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Autoselect The Autoselect mode allows the reading out of a binary code from the device and will identify its manufacturer and type. The intent is to allow programming equipment to automatically match the device to be programmed with its corresponding ...

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Table 4. Sector Address Tables (Am29LV800T) A18 A17 A16 A15 SA0 SA1 SA2 SA3 SA4 SA5 ...

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Table 5. Sector Address Tables (Am29LV800B) A18 A17 A16 A15 SA0 SA1 SA2 SA3 SA4 SA5 ...

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Write Device erasure and programming are accomplished via the command register. The command register is written by bringing while Addresses are latched on the falling edge ...

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Table 6. Am29LV800 Command Definitions Command Bus First Bus Sequence Write Write Cycle Read/Reset Cycles (Note 2) Req’d Addr Word Reset/Read 1 XXX Byte Word 555 Autoselect 3 Manufacturer ID Byte AAA Autoselect Word 555 Device ID 3 Byte AAA ...

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Word/Byte Programming The device can be programmed on a word or byte ba- sis. Programming is a four-bus-cycle operation. There are two “unlock” write cycles. These are followed by the program command and address/data write cycles. Ad- dresses are latched ...

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Automatic sector erase operations begin on the rising edge of the WE (or CE) pulse of the last sector erase command issued, and once the 80 s time-out window has expired. The status of the sector erase operation can be ...

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Write Operation Status Address Sensitivity of Write Status Flags Detailed in Table 7 are all the status flags that can be used to check the status of the device for current mode operation. During Sector Erase, the part provides the ...

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DQ7 at one in- stant of time and then that byteUs valid data at the next instant of time. Depending on when the system sam- ples the DQ7 output, it may read the status ...

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DQ2 bit. Note that a sector which is selected for erase is not available for read in Erase Suspend mode. Other sectors which are not se- lected for Erase can be read in Erase ...

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RESET: Hardware Reset Pin The RESET pin is an active low signal. A logic ‘0’ on this pin will force the device out of any mode that is currently executing back to the reset state. This allows a system reset ...

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Word/Byte Configuration The BYTE pin of the Am29LV800 is used to set device data I/O pins in the byte or word configuration. If the BYTE pin is set at logic ‘1’, the device is in word config- uration, DQ0–15 are ...

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Data Protection The Am29LV800 is designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transi- tions. During power-up, the device automatically resets the internal state machine to the read ...

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EMBEDDED ALGORITHMS Increment Address Figure 7. Embedded Program Algorithm Embedded Program Algorithm Bus Operation Command Sequence Standby* Write Program Read Standby* * Device is either powered-down, erase inhibit, or program inhibit ...

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Embedded Erase Algorithm Bus Operation Command Sequence Standby Write Erase Read Standby START Write Erase Cmd Sequence Data Poll from Device No Data = FFH? Yes Erasure Completed Figure ...

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Data Polling Algorithm START Yes DQ7 = Data? No DQ5 = 1? Yes Yes DQ7 = Data? No FAIL PASS Figure 9. Data Polling Algorithm Am29LV800T/Am29LV800B 20478D-16 ...

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Toggle Bit Algorithm No +0.8 V –0.5 V Figure 11. Maximum Negative Overshoot Waveform 0 2.0 V Figure 12. Maximum Positive Overshoot Waveform START ...

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ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . . . – +150 C Ambient Temperature with Power Applied ...

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DC CHARACTERISTICS CMOS Compatible Parameter Symbol Parameter Description I Input Load Current Input Load Current LIT I Output Leakage Current Active Current (Note 1) CC1 Active Current (Notes 2 and 4) ...

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DC CHARACTERISTICS (Continued 500 1000 Note: Addresses are switching at 1 MHz Note ...

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DC CHARACTERISTICS (Continued) TTL/NMOS Compatible Parameter Symbol Parameter Description I Input Load Current Input Load Current LIT I Output Leakage Current Active Read Current (Note 1) CC1 Active Write Current (Note ...

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AC CHARACTERISTICS Read-Only Operations Characteristics Parameter Symbols JEDEC Standard Description t t Read Cycle Time (Note 3) AVAV Address to Output Delay AVQV ACC t t Chip Enable to Output Delay ELQV Output Enable ...

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AC CHARACTERISTICS Write (Erase/Program) Operations Parameter Symbols JEDEC Standard Description t t Write Cycle Time (Note 2) AVAV Address Setup Time AVWL Address Hold Time WLAX Data Setup Time DVWH DS ...

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KEY TO SWITCHING WAVEFORMS WAVEFORM SWITCHING WAVEFORMS 3.0 V 1.5 V Input 0.0 V Figure 15. Input Waveforms and Measurement Levels INPUTS OUTPUTS Must be Will be Steady ...

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SWITCHING WAVEFORMS Addresses Outputs Figure 16. AC Waveforms for Read Operations t WC Addresses CE t GHWL DATA V CC Notes the data input to the device. IN ...

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SWITCHING WAVEFORMS t WC Addresses 555h CE t GHWL WPH t DS DATA AAh V CC Notes the sector address for Sector Erase. Addresses = Don’t Care for Chip Erase. 2. ...

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SWITCHING WAVEFORMS DQ6/DQ2 t DH Note: DQ6 stops toggling (The device has completed the embedded operation.) Figure 20. Toggle Bit Timings (During Embedded Algorithm Operations RY/BY Note: DQ7 = Valid Data (The device has completed ...

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SWITCHING WAVEFORMS CE OE BYTE DQ0–DQ14 DQ15/A-1 Figure 23. BYTE Timing Diagram for Read Operation CE WE BYTE Figure 24. BYTE Timing Diagram for Write Operations ELFL ...

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Notes: 1. All protected sectors unprotected. All previously protected sectors are protected once again. Figure 25. Temporary Sector Unprotect Algorithm t VIDR 12 V RESET Figure 26. Temporary Sector Unprotect Timing Diagram P ...

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AC CHARACTERISTICS Write (Erase/Program) Operations Alternate CE Controlled Writes Parameter Symbols JEDEC Standard Description t t Write Cycle Time (Note 2) AVAV Address Setup Time AVWL Address Hold Time ELAX Data ...

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SWITCHING WAVEFORMS t WC ADDRESSES 555h Data VCS Notes address of the memory location to be programmed data to be programmed at byte address. 3. DQ7 ...

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ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Chip Erase Time Byte Programming Time Word Programming Time Byte Mode Chip Programming Time Word Mode Erase/Program Endurance Notes: 1. The typical program and erase times are considerably less than the maximum ...

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PIN CAPACITANCE, 44-PIN PSOP Parameter Symbol OUT C IN2 Notes: 1. Sampled, not 100% tested. 2. Test conditions 1.0 MHz. A DATA RETENTION Parameter Minimum Pattern Data Retention Time P R ...

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PHYSICAL DIMENSIONS* TS 048 48-Pin Standard Thin Small Outline Package (measured in millimeters) Pin 1 I. 18.30 18.50 19.80 20.20 1.20 MAX 0.25MM (0.0098") BSC * For reference only, not drawn to scale. BSC is an ANSI standard ...

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PHYSICAL DIMENSIONS (continued) TSR048 48-Pin Reverse Standard Thin Small Outline Package (measured in millimeters) Pin 1 I. 18.30 18.50 19.80 20.20 1.20 MAX 0.25MM (0.0098") BSC ...

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PHYSICAL DIMENSIONS (continued) SO 044 44-Pin Thin Small Outline Package (measured in millimeters 1.27 NOM. TOP VIEW 28.00 28.40 2.17 2.45 0.35 0.50 SIDE VIEW ...

Page 47

REVISION SUMMARY FOR AM29LV800 Distinctive Characteristics: Rearranged bullets. Renamed “Extended voltage range...” bullet to “Single power supply operation.” Under “Single power supply operation” and “High per- formance” bullets, defined standard and extended volt- age ranges and added 90 ns speed ...

Page 48

... Copyright © 1997 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof and ExpressFlash are trademarks of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. ...

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