CY7C1304V25-167BZC Cypress Semiconductor Corporation., CY7C1304V25-167BZC Datasheet

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CY7C1304V25-167BZC

Manufacturer Part Number
CY7C1304V25-167BZC
Description
Manufacturer
Cypress Semiconductor Corporation.
Datasheet

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CY7C1304V25-167BZC
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Cypress Semiconductor Corporation
Features
Selection Guide
Logic Block Diagram
Maximum Operating Frequency (MHz)
Maximum Operating Current (mA)
• Separate Independent Read and Write Data Ports
• 167 MHz Clock for High Bandwidth
• 4-Word Burst for reducing address bus frequency
• Double Data Rate (DDR) interfaces on both Read &
• Two input clocks (K and K) for precise DDR timing
• Two output clocks (C and C) accounts for clock skew
• Single multiplexed address input bus latches address
• Separate Port Selects for depth expansion
• Synchronous internally self-timed writes
• 2.5V core power supply with HSTL Inputs and Outputs
• 13x15 mm 1.0 mm pitch fBGA package, 165 ball (11x15
• Variable drive HSTL output buffers
• Expanded HSTL output voltage (1.4V-1.9V)
• JTAG Interface
Write Ports (data transferred at 333 MHz) @167 MHz
and flight time mis-matches
inputs for both READ and WRITE ports
matrix)
— Supports concurrent transactions
— 2.5 ns Clock-to-Valid access time
— SRAM uses rising edges only
A
(16:0)
WPS
BWS
Vref
D
[17:0]
K
K
[0:1]
17
Register
A d d re s s
Control
L o g ic
9-Mb Pipelined SRAM with QDR™ Architecture
18
CLK
Gen.
3901 North First Street
Advanced Information
W rite
7C1304V25-167
Reg
Read Data Reg.
W rite
Reg
167
450
Functional Description
The CY7C1304V25 is a 2.5V Synchronous Pipelined SRAM
equipped with QDR architecture. QDR architecture consists of
two separate ports to access the memory array. The Read port
has dedicated Data Outputs to support Read operations and
the Write Port has dedicated Data Inputs to support Write op-
erations. QDR architecture has separate data inputs and data
outputs to completely eliminate the need to “turn-around” the
data bus required with common I/O devices. Access to each
port is accomplished through a common address bus. Ad-
dresses for Read and Write addresses are latched on alter-
nate rising edges of the input (K) clock. Accesses to the
CY7C1304V25 Read and Write ports are completely indepen-
dent of one another. In order to maximize data throughput,
both Read and Write ports are equipped with Double Data
Rate (DDR) interfaces. Each address location is associated
with 4 18-bit words that burst sequentially into or out of the
device. Since data can be transferred into and out of the device
on every rising edge of both input clocks (K/K and C/C) mem-
ory bandwidth is maximized while simplifying system design
by eliminating bus “turn-arounds”.
Depth expansion is accomplished with Port Selects for each
port. Port selects allow each port to operate independently.
All synchronous inputs pass through input registers controlled
by the K or K input clocks. All data outputs pass through output
registers controlled by the C or C input clocks. Writes are con-
ducted with on-chip synchronous self-timed write circuitry.
W rite
Reg
72
36
W rite
Reg
36
San Jose
7C1304V25-133
Reg.
Reg.
133
350
A dd res s
Register
Control
Logic
CA 95134
Reg.
CY7C1304V25
18
17
7C1304V25-100
February 15, 2000
C
C
RPS
18
408-943-2600
A
230
100
(16:0)
Q
[17:0]

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CY7C1304V25-167BZC Summary of contents

Page 1

... Advanced Information 9-Mb Pipelined SRAM with QDR™ Architecture Functional Description The CY7C1304V25 is a 2.5V Synchronous Pipelined SRAM equipped with QDR architecture. QDR architecture consists of two separate ports to access the memory array. The Read port has dedicated Data Outputs to support Read operations and the Write Port has dedicated Data Inputs to support Write op- erations ...

Page 2

... VDD VDDQ VDD VSS VDD VDDQ VSS VSS VDD VDDQ VSS VSS VSS VSS VSS VSS VSS VSS CY7C1304V25 RPS NC/ Gnd/ NC 18M 72M VSS VSS VDDQ VDDQ NC NC ...

Page 3

... When deselected, the pending access is allowed to complete and the output drivers are automatically three-stated following the next rising edge of the C clock. The CY7C1304V25 is organized internally as 128K x 72. Each read access consists of a burst of four sequential 18-bit transfers. Positive Output Clock Input used in conjunction with C to clock out the Read data from the device ...

Page 4

... The requested data FY/WRITE operations to a Byte Write operation. Single Clock Mode The CY7C1304V25 can be used with a single clock that con- trols both the input and output registers. In this mode the de- vice will recognize only a single pair of input clocks (K and K) that control both the input and output registers. This operation is identical to the operation if the device had zero skew be- tween the K/K and C/C clocks ...

Page 5

... Read/Write operations being initiated, with the first access be- ing a Read. Depth Expansion The CY7C1304V25 has a Port Select input for each port. This allows for easy depth expansion. Both Port Selects are sam- pled on the rising edge of the Positive Input Clock only (K). ...

Page 6

... Application Example 18 Memory Controller 72 Q Din 72 Add. Cntr. CLK/CLK (input) CLK/CLK (output Advanced Information SRAM #1 SRAM # R= REF 6 CY7C1304V25 TERM REF Q R= ...

Page 7

... This signal was HIGH on previous K clock rise. Initiating consecutive Read or Write operations on consecutive K clock rises is not permitted. The device will ignore the second Read request. Advanced Information RPS WPS DQ [6] [ D(A+00)at K(t+1) [ Q(A+00) at C(t+ High Previous State represents rising edge. 7 CY7C1304V25 D(A+01) at D(A+10) at D(A+11) at K(t+1) K(t+2) K(t+2) Q(A+01) at Q(A+10) at Q(A+11) at C(t+1) C(t+2) C(t+2) High-Z High-Z) High-Z Previous Previous Previous State State State ...

Page 8

... No data is written into the device during this portion of a write operation. No data is written into the device during this portion of a write operation. and BWS 0 8 CY7C1304V25 ) are written into the [17:0] ) are written into the [17: written into [8: written into ...

Page 9

... The TAP controller can- not be used to load address, data or control signals into the SRAM and cannot preload the Input or output buffers. The SRAM does not implement the 1149.1 commands EXTEST or 9 CY7C1304V25 ...

Page 10

... EXTEST EXTEST is a mandatory 1149.1 instruction which ex- ecuted whenever the instruction register is loaded with all 0s. EXTEST is not implemented in the CY7C1304V25 TAP con- troller, and therefore this device is not compliant to the 1149.1 standard. The TAP controller does recognize an all-0 instruction. When ...

Page 11

... Note: The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Advanced Information 1 SELECT DR-SCAN 0 1 CAPTURE-DR 0 SHIFT- EXIT1- PAUSE- EXIT2-DR 1 UPDATE- CY7C1304V25 1 SELECT IR-SCAN 0 1 CAPTURE-IR 0 SHIFT- EXIT1- PAUSE- EXIT2-IR 1 UPDATE- ...

Page 12

... Over the Operating Range Test Conditions I = 2.0mA 100 2.0mA 100 A OL GND DDQ /2, Undershoot V (AC)<0.5V for t<t /2, Power-up: VIH<2.6V and VDD<2.4V and VDDQ<1.4V for t<200ms. IL TCYC 12 CY7C1304V25 0 Selection Circuitry Min. Max. 1.7 2.1 0.7 0.2 1.7 V +0.3 DD –0.3 0 TDO Unit ...

Page 13

... CS CH 13. Test conditions are specified using the load in TAP AC test conditions. t Advanced Information [12, 13] Over the Operating Range Description / ns CY7C1304V25 Min. Max Unit 100 ns 10 MHz ...

Page 14

... TAP Timing and Test Conditions 1.25V 50 W TDO GND (a) Test Clock TCK Test Mode Select TMS Test Data-In TDI Test Data-Out TDO Advanced Information [13] 2. TMSS t TMSH t TDIS t TDIH t TDOX 14 CY7C1304V25 ALL INPUT PULSES 1.25V t TCYC t TDOV ...

Page 15

... Captures the Input/Output contents. Places the boundary scan register between TDI and TDO. The SAMPLE Z command implemented by the CY7C1304V25 device will place the output buffers into a HIGH-Z condition. Do Not Use: This instruction is reserved for future use. Captures the Input/Output ring contents. Places the boundary scan register between TDI and TDO ...

Page 16

... Q12 54 D13 55 Q13 56 D14 57 Q14 58 D15 59 Q15 60 D16 61 Q16 62 D17 63 Q17 CY7C1304V25 Signal Name Bump (Don’t Care ...

Page 17

... MHz Max Both Ports De- 6.0 ns cycle, 167 MHz DD selected 7.5 ns cycle, 133 MHz 1/t In- IL MAX CYC, puts Static 10 ns cycle, 100 MHz 17 CY7C1304V25 Ambient [15] Temperature V DD 0°C to +70°C 2.5+/–100mV 1.4V to 1.9V Min. Max. 2.4 2.6 1.4 1.9 V /2+0.3 V DDQ DDQ V V /2-0 ...

Page 18

... At any given voltage and temperature t is less than t CHZ Advanced Information [17] Min. 6.0 2.4 2.4 2.7 0.0 [16] 1.2 0.7 , BWS ) 0 0.7 0.7 , BWS ) 0 0.7 [17, 18] [17, 18] 1.2 /I and load capacitance shown in ( test loads and t less than t . CLZ CHZ CO 18 CY7C1304V25 -167 -133 -100 Max Min. Max Min. Max 7.5 10.0 3.2 3.5 3.2 3.5 3.3 3.4 4.1 4.4 5.4 2.0 0.0 2.5 0.0 3.0 2.5 3.0 3.0 1.2 1.2 0.8 1.0 0.8 1.0 0.8 1.0 0.8 1.0 0.8 1.0 0.8 1 ...

Page 19

... W (a) 1304V25-2 Advanced Information Test Conditions MHz 2. 1.5V DDQ V /2 DDQ R=50 W REF DDQ OUTPUT Device 0.25V 5 pF Under ZQ Test RQ= 250 W INCLUDING (b) JIG AND SCOPE 19 CY7C1304V25 Max. Unit [16] ALL INPUT PULSES 1.25V 0.75V 1304V25-3 ...

Page 20

... (16: RPS Data Out Device originally deselected. Activity on the Write Port is unknown. = DON’T CARE Advanced Information CLZ Q(A+1) Q(A) Q(A+ KHCH t DOH DOH = UNDEFINED 20 CY7C1304V25 t CYC t KH Deselect Q(A+3) Q(B+1) Q(B+2) Q(B+3) Q(B) t CHZ t DOH ...

Page 21

... C and C reference to Data Outputs and do not affect Write operations. Activity on the Read Port is unknown. BWS LOW=Valid, Byte writes allowed, see Byte write table for details. x Advanced Information D(A+3) D(B) D(A) D(A+2) D(A+ DON’T CARE = UNDEFINED 21 CY7C1304V25 CYC t HC D(B+1) D(B+2) D(B+ ...

Page 22

... Switching Waveforms (continued) Read/Write/Deselect Sequence WPS RPS D [17:0] Q [17: Read Port previously deselected. BWS assumed active. x Advanced Information C D D(B+1) D(B+2) D(B+3) D(B) Q(A+1) Q(A+1) Q(A+3) Q(A) Q(A+2) Q(C) = UNDEFINED = DON’T CARE 22 CY7C1304V25 D(D) D(D+1) D(D+2) D(D+3) Q(G+1) Q(C+1) Q(C+2) Q(C+3) ...

Page 23

... Ordering Information Speed (MHz) Ordering Code 167 CY7C1304V25-167BZC/ 133 CY7C1304V25-133BZC/ 100 CY7C1304V25-100BZC/ Document #: 38–00925–** Package Diagram © Cypress Semiconductor Corporation, 2000. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user ...

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