CYK001M16ZCCAU-70BAI Cypress Semiconductor Corporation., CYK001M16ZCCAU-70BAI Datasheet

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CYK001M16ZCCAU-70BAI

Manufacturer Part Number
CYK001M16ZCCAU-70BAI
Description
Manufacturer
Cypress Semiconductor Corporation.
Datasheet

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Cypress Semiconductor Corporation
Document #: 38-05454 Rev. *B
Features
Functional Description
The CYK001M16ZCCAU is a high-performance CMOS
Pseudo static RAM organized as 1M words by 16 bits that
supports an asynchronous memory interface. This device
features advanced circuit design to provide ultra-low active
current. This is ideal for providing More Battery Life™ (MoBL
in portable applications such as cellular telephones. The
device can be put into standby mode when deselected (CE
HIGH or both BHE and BLE are HIGH). The input/output pins
Note:
1. For best-practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
• Wide voltage range: 2.70V–3.30V
• Access Time: 55 ns, 70 ns
• Ultra-low active power
• Ultra low standby power
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Deep Sleep Mode
• Offered in a 48-ball BGA Package
Logic Block Diagram
— Typical active current: 3 mA @ f = 1 MHz
— Typical active current: 13 mA @ f = f
A
A
A
A
A
A
A
A
A
A
A
10
9
8
7
6
5
4
3
2
1
0
max
Power-Down
DATA IN DRIVERS
3901 North First Street
COLUMN DECODER
Circuit
16-Mbit (1M x 16) Pseudo Static RAM
RAM Array
1M × 16
®
)
(I/O
when: deselected (CE HIGH), outputs are disabled (OE
HIGH), both Byte High Enable and Byte Low Enable are
disabled (BHE, BLE HIGH), or during a write operation (CE
LOW and WE LOW).
Writing to the device is accomplished by asserting Chip
Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low
Enable (BLE) is LOW, then data from I/O pins (I/O
I/O
(A
from I/O pins (I/O
specified on the address pins (A
Reading from the device is accomplished by asserting Chip
Enable (CE) and Output Enable (OE) inputs LOW while forcing
the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is
LOW, then data from the memory location specified by the
address pins will appear on I/O
(BHE) is LOW, then data from memory will appear on I/O
I/O
and write modes.
This device incorporates a Low Power mode wherein data
integrity is not guaranteed, but Power Consumption reduces
to less than 100 µW. This mode (Deep Sleep Mode) is enabled
by driving ZZ LOW.See the Truth Table for a complete
description of Read, Write, and Deep Sleep mode.
ZZ
0
7
15
0
through A
), is written into the location specified on the address pins
. Refer to the truth table for a complete description of read
through I/O
BHE
BLE
17
San Jose
). If Byte High Enable (BHE) is LOW, then data
I/O
I/O
15
8
0
8
CE
–I/O
–I/O
) are placed in a high-impedance state
through I/O
BHE
WE
OE
BLE
7
15
,
CE
CA 95134
15
CYK001M16ZCCA
0
0
) is written into the location
to I/O
through A
Revised May 15, 2004
7
. If Byte High Enable
17
).
408-943-2600
MoBL3™
0
through
8
to
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CYK001M16ZCCAU-70BAI Summary of contents

Page 1

... CMOS for optimum speed/power • Deep Sleep Mode • Offered in a 48-ball BGA Package Functional Description The CYK001M16ZCCAU is a high-performance CMOS Pseudo static RAM organized as 1M words by 16 bits that supports an asynchronous memory interface. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ ...

Page 2

... Product V Range (V) CC Min. Typ. CYK001M16ZCCAU 2.70 3.0 Notes: 2. DNU pins have to be left floating. 3. Ball H6 can be used to upgrade to 32M density “no connect”—not connected internally to the die. 5. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V Document #: 38-05454 Rev ...

Page 3

... CC V CCmax OUT CMOS levels −0. 3.3V 100 CC –0.2V, (Address and = 3.30V CC – 0. 3.3V CC – 0. 3.30V ; ZZ = CCMAX CYK001M16ZCCA MoBL3™ ........................................–0.4V to 3.7V [ .....................................–0. 2.70V to 3.30V CYK001M16ZCCAU [5] [5] Max. Min. Typ. Max. Unit 3.0 3.3 2.7 3 – 0.4 0 0.4V V 0.4V CC 0.4 -0.4 0.4 +1 – ...

Page 4

Capacitance Parameter Description C Input Capacitance IN C Output Capacitance OUT [9] Thermal Resistance Parameter Description Θ Thermal Resistance JA (Junction to Ambient) Θ Thermal Resistance JC (Junction to Case) AC Test Loads and Waveforms OUTPUT ...

Page 5

Switching Characteristics Over the Operating Range Parameter Description Read Cycle t Read Cycle Time RC t Address to Data Valid AA t Data Hold from Address Change OHA t CE LOW to Data Valid ACE t OE LOW to Data ...

Page 6

Switching Waveforms Read Cycle 1 (Address Transition Controlled) ADDRESS t SK DATA OUT PREVIOUS DATA VALID [14, 16] Read Cycle 2 (OE Controlled) ADDRESS ACE / BHE BLE t LZBE OE t LZOE HIGH IMPEDANCE DATA ...

Page 7

Switching Waveforms (continued) [12, 13, 17, 18, 19] Write Cycle 1 (WE Controlled) ADDRESS BHE BLE OE DATA I/O DON’T CARE t HZOE [12, 13, 17, 18, 19] Write Cycle 2 (CE Controlled) ADDRESS CE ...

Page 8

Switching Waveforms (continued) Write Cycle 3 (WE Controlled, OE LOW) ADDRESS CE / BHE BLE DATAI/O DON’T CARE t Write Cycle 4 (BHE/BLE Controlled, OE LOW) ADDRESS CE BHE/BLE DON’T CARE DATA I/O Document ...

Page 9

Deep Sleep Mode This mode can be used to lower the power consumption of the PSRAM in an application. In this mode, the data integrity of the PSRAM is not guaranteed. Deep Sleep Mode can be enabled by driving ZZ ...

Page 10

... Ordering Information Speed (ns) Ordering Code 55 CYK001M16ZCCAU-55BAI 70 CYK001M16ZCCAU-70BAI Package Diagram TOP VIEW A1 CORNER 6.00±0.10 B SEATING PLANE C MoBL is a registered trademark and MoBL3 and More Battery Life are trademarks of Cypress Semiconductor Corporation. All product and company names mentioned in this document may be the trademarks of their respective holders. ...

Page 11

Document History Page Document Title: CYK001M16ZCCA MoBL3™ 16-Mbit (1M x 16) Pseudo Static RAM Document Number: 38-05454 Issue Orig. of REV. ECN NO. Date Change ** 132407 01/27/04 *A 220121 See ECN *B 230851 See ECN Document #: 38-05454 Rev. ...

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