MGF0909A Mitsumi Electronics, Corp., MGF0909A Datasheet
MGF0909A
Manufacturer Part Number
MGF0909A
Description
Manufacturer
Mitsumi Electronics, Corp.
Datasheet
1.MGF0909A.pdf
(3 pages)
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Quantity
Price
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Part Number:
MGF0909A
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TOSHIBA
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12
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Part Number:
MGF0909A-01
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EMCT
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Mitsubishi
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DESCRIPTION
The MGF0909A, GaAs FET with an N-channel schottky gate, is
designed for use in UHF band amplifiers.
FEATURES
• High output power
• High power gain
• High power added efficiency
APPLICATION
For UHF Band power amplifiers
QUALITY GRADE
• GG
RECOMMENDED BIAS CONDITIONS
• V
• I
• Rg=100
• Refer to Bias Procedure
ABSOLUTE MAXIMUM RATINGS
*1:TC=25˚C
ELECTRICAL CHARACTERISTICS
*1:Channel to case *2:Pin=22dBm
I
V
gm
P
G
R
D
Symbol
Symbol
DSS
DS
add
V
V
I
I
I
Gs(off)
1dB
=1.3A
P
T
T
LP
th(ch-c)
D
GR
GF
GSO
GDO
ch
stg
T
=10V
P
G
add
1dB
LP
=11dB(TYP.)
=45%(TYP.)
=38dBm(TYP.)
Saturated drain current
Gate to source cut-off voltage
Transconductance
Output power
Linear power gain
Power added efficiency at P
Thermal resistance
Gate to source voltage
Gate to drain voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Channel temperature
Storage temperature
Parameter
Parameter
@f=2.3GHz
@f=2.3GHz,P
@f=2.3GHz,P
1dB
*1
*2
*1
(T
in
1dB
V
V
V
V
(T
a
=25˚C)
=20dBm
DS
DS
DS
DS
V
a
f
=20dBm
=25˚C)
=3V,V
=3V,I
=3V,I
=10V,I
method
-65 to +175
Ratings
D
D
31.5
27.3
175
-15
-15
GS
5.0
15
=10mA
=1.3A
D
=1.3A,f=2.3GHz
=0V
Test conditions
Unit
GF-7
mA
mA
OUTLINE DRAWING
˚C
W
˚C
V
V
A
MITSUBISHI SEMICONDUCTOR GaAs FET
ø2.2
2
L, S BAND POWER GaAs FET
9.0±0.2
14.0
5.0
3
Min
37
10
1
-2
–
–
–
–
0.6±0.2
MGF0909A
Limits
Typ
1.5
38
11
45
–
–
–
3
1
2
2
Unit:millimeters
GATE
SOURCE
DRAIN
Max
5.5
-5
–
–
5
–
–
Nov. ´97
˚C/W
dBm
Unit
dB
%
A
V
S
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MGF0909A Summary of contents
Page 1
... DESCRIPTION The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • High output power P =38dBm(TYP.) @f=2.3GHz 1dB • High power gain G =11dB(TYP.) @f=2.3GHz,P LP • High power added efficiency =45%(TYP.) @f=2.3GHz,P add APPLICATION For UHF Band power amplifiers QUALITY GRADE • ...
Page 2
... DRAIN TO SOURCE VOLTAGE = =1. (dBm) in MGF0909A L, S BAND POWER GaAs FET I vs =-0.5V/Step and add vs 1dB D DS (f=2.3GHz ...
Page 3
... MGF0909A L, S BAND POWER GaAs FET +90˚ 3.0GHz 3.0GHz 0.5GHz 0˚ 0.5GHz 0.1 0.2 -90˚ MSG/MAG K (dB) Magn. Angle(deg.) 0.823 0.652 25 ...