FY4AEJ-03 Renesas Electronics Corporation., FY4AEJ-03 Datasheet
FY4AEJ-03
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FY4AEJ-03 Summary of contents
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To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April ...
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... Maximum power dissipation D T Channel temperature ch T Storage temperature stg — Weight Typical value MITSUBISHI POWER MOSFET HIGH-SPEED SWITCHING USE OUTLINE DRAWING 0.4 30V 30/80m 4A Conditions = FY4AEJ-03 Nch/Pch POWER MOSFET Dimensions in mm 1.8 MAX. 5.0 SOURCE GATE DRAIN 1. Ratings Unit n-ch p-ch 30 – – ...
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... DS = –10V GS = – –10V DS = –10V 0V 1MHz GS = –15V –2A –10V GEN 50A MITSUBISHI POWER MOSFET FY4AEJ-03 HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET Limits Unit Min. Typ. Max. 30 — — V — — 0.1 A — — 0.1 mA 1.0 1.5 2.0 V — — ...
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... ON-STATE RESISTANCE VS. 100 Pulse Test – (V) DRAIN CURRENT I GS MITSUBISHI POWER MOSFET FY4AEJ-03 HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET 100 s 1ms 10ms 100ms (V) DS (TYPICAL 10V,8V,6V,5V GS ...
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... 15V 20V 4 25V 2 Tch = = GATE CHARGE Q (nC) g MITSUBISHI POWER MOSFET FY4AEJ-03 HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL =10V DS Pulse Test C,75 C,125 ...
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... BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 1.2 1 1mA D 0.8 Pulse Test 0.6 0.4 – 100 150 CHANNEL TEMPERATURE Tch ( C) MITSUBISHI POWER MOSFET FY4AEJ-03 HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 4.0 3 10V 1mA D Pulse Test 2.4 1.6 0.8 0 – 100 CHANNEL TEMPERATURE Tch ( C) ...
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... I =– –4A –2A 0 –10 – 1 –8 –10 –2 –3 –5 –7 (V) DRAIN CURRENT I GS MITSUBISHI POWER MOSFET FY4AEJ-03 HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET 100 s 1ms 10ms 100ms DC 0 –10 1 –2 –3 –5 –7 –2 –3 –5 (V) DS ...
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... Tch = – GATE CHARGE Q (nC) g MITSUBISHI POWER MOSFET FY4AEJ-03 HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL –10V DS 3 Pulse Test 2 ...
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... BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 1.2 1 –1mA D 0.8 0.6 0.4 – 100 150 CHANNEL TEMPERATURE Tch ( C) MITSUBISHI POWER MOSFET FY4AEJ-03 HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) –4.0 –3 –10V –1mA D –2.4 –1.6 –0.8 0 – 100 ...