IRF4435 International Rectifier Corp., IRF4435 Datasheet
IRF4435
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IRF4435 Summary of contents
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... Thermal Resistance Parameter R Maximum Junction-to-Ambient JA www.irf.com HEXFET Max. @ -10V GS @ -10V GS 0.02 - 150 Max. PD- 94243 IRF4435 ® Power MOSFET -30V DSS 0.020 D DS(on) SO-8 Units -30 V -8.0 -6.4 A -50 2.5 W 1.6 W/°C ± °C ...
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... IRF4435 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
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... Fig 3. Typical Transfer Characteristics www.irf.com 1000 TOP 100 BOTTOM 10 1 ° 0.1 0.1 10 100 Fig 2. Typical Output Characteristics 2 1.5 ° 150 C J 1.0 0.5 = -15V 0.0 5.0 6.0 -60 -40 -20 Fig 4. Normalized On-Resistance IRF4435 VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V -2.7V -2.70V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS -8. -10V 100 120 140 160 ° ...
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... IRF4435 3500 1MHz iss 3000 rss oss ds gd 2500 C iss 2000 1500 1000 C oss 500 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10 ° 150 C J ° ...
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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 0.20 0.10 0.00 -0.10 -0.20 -0.30 -0.40 -50 125 150 ° Fig 10. Typical Vgs(th) Variance Vs. 0.001 0.01 0 Rectangular Pulse Duration (sec) 1 IRF4435 Id = -250µA - 100 125 Temperature ( °C ) Juction Temperature Notes: 1. Duty factor ...
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... IRF4435 0.10 0.08 0. -8.0A 0.04 0.02 0. GS, Gate -to -Source Voltage ( V ) Fig 12. Typical On-Resistance Vs. Gate Voltage 6 0.10 0.08 0.06 0.04 0.02 0. Fig 13. Typical On-Resistance Vs. VGS= - 4.5V VGS = -10V Drain Current ( A ) Drain Current www.irf.com ...
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... SO-8 Part Marking www.irf.com 45° IRF4435 INCHES MILLIMETERS MIN MAX MIN MAX A .0532 .0688 1.35 1 ...
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... IRF4435 SO-8 Tape and Reel ( ...