IRF6641 International Rectifier Corp., IRF6641 Datasheet

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IRF6641

Manufacturer Part Number
IRF6641
Description
Manufacturer
International Rectifier Corp.
Datasheet

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Manufacturer
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Part Number:
IRF6641
Manufacturer:
NANYA
Quantity:
10
Part Number:
IRF6641
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF6641TR1PBF
Manufacturer:
IR
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Part Number:
IRF6641TRPBF
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Part Number:
IRF6641TRPBF
Manufacturer:
IR
Quantity:
20 000
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

ƒ
Description
The IRF6641PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving
previous best thermal resistance by 80%.
The IRF6641PbF is optimized for primary side sockets in forward and push-pull isolated DC-DC topologies, for wide range 36V-
75V input voltage range systems. The reduced total losses in the device coupled with the high level of thermal performance
enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal
for high performance isolated DC-DC converters.
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www.irf.com
V
V
I
I
I
I
E
I
Absolute Maximum Ratings
D
D
D
DM
AR
DS
GS
AS
RoHS Compliant 
Lead-Free (Qualified up to 260°C Reflow)
Application Specific MOSFETs
Ideal for High Performance Isolated Converter
Optimized for Synchronous Rectification
Low Conduction Losses
High Cdv/dt Immunity
Dual Sided Cooling Compatible 
Compatible with existing Surface Mount Techniques 
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
@ T
@ T
@ T
Primary Switch Socket
SH
A
A
C
200
180
160
140
120
100
= 25°C
= 70°C
= 25°C
80
60
40
20
0
4
Fig 1. Typical On-Resistance vs. Gate Voltage
SJ
V GS,
6
Gate -to -Source Voltage (V)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
8
SP
10
T J = 125°C
T J = 25°C
12
Ãg
g
I D = 5.5A
Parameter
14
GS
GS
GS
MZ
@ 10V
@ 10V
@ 10V
h
16
f
MN
T
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
C
measured with thermocouple mounted to top (Drain) of part.
12.0
10.0
8.0
6.0
4.0
2.0
0.0
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage

J
= 25°C, L = 0.77mH, R
0
I D = 5.5A
200V max ±20V max
5
DirectFET™ Power MOSFET ‚
IRF6641TRPbF
Q
V
34nC
Q G , Total Gate Charge (nC)
g tot
DSS
10
V DS = 160V
V DS = 100V
V DS = 40V
15
Max.
200
±20
4.6
3.7
26
37
46
11
20
G
9.5nC
V
Q
= 25Ω, I
GS
gd
25
DirectFET™ ISOMETRIC
AS
30
= 11A.
51mΩ@ 10V
R
TM
V
35
4.0V
DS(on)
gs(th)
packaging
Units
mJ
40
V
A
A
11/14/07
1

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IRF6641 Summary of contents

Page 1

... The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6641PbF is optimized for primary side sockets in forward and push-pull isolated DC-DC topologies, for wide range 36V- 75V input voltage range systems. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters ...

Page 2

Electrical Characteristic @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation 70°C Power Dissipation 25°C Power Dissipation Peak Soldering Temperature P Operating Junction and Storage Temperature ...

Page 4

VGS TOP 15V 10V 8.0V BOTTOM 7.0V 10 ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 100 150° 25°C ...

Page 5

150° 25° -40° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ...

Page 6

Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF D.U. 3mA I G Current Sampling Resistors Fig 14a. Gate Charge Test Circuit D.U 20V GS 0.01 Ω Fig ...

Page 7

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 18. DirectFET™ Substrate and PCB Layout, MZ Outline (Medium Size Can, Z-Designation). Please see DirectFET application note AN-1035 for all details regarding the ...

Page 8

DirectFET™ Outline Dimension, MZ Outline (Medium Size Can, Z-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking 8 DIMENSIONS METRIC IMPERIAL CODE ...

Page 9

... F 0.256 6.50 6.70 G 1.50 N.C 0.059 H 1.50 1.60 0.059 NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6641TRPBF). For 1000 parts on 7" reel, order IRF6641TR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) METRIC IMPERIAL METRIC CODE MIN MAX MIN MAX MIN MAX A 330 ...

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