AS4LC256K16EO-60TC Alliance Semiconductor, AS4LC256K16EO-60TC Datasheet

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AS4LC256K16EO-60TC

Manufacturer Part Number
AS4LC256K16EO-60TC
Description
Manufacturer
Alliance Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
AS4LC256K16EO-60TC
Manufacturer:
MAXIM
Quantity:
5 620
Features
• Organization: 262,144 words × 16 bits
• High speed
• Low power consumption
Pin arrangement
Selection guide
Maximum RAS access time
Maximum column address access time
Maximum CAS access time
Maximum output enable (OE) access time
Minimum read or write cycle time
Minimum EDO page mode cycle time
Maximum operating current
Maximum CMOS standby current
4/11/01; V.1.1
- 45/60 ns RAS access time
- 10/12/15/20 ns column address access time
- 7/10/10 ns CAS access time
- Active:
- Standby: 2.8 mW max, CMOS I/O (AS4LC256K16EO-
I/O6
RAS
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O7
Vcc
Vcc
Vcc
WE
NC
NC
NC
A0
A1
A2
A3
10
11
12
13
14
15
16
17
18
19
20
1
2
3
4
5
6
7
8
9
280 mW max (AS4LC256K16EO-35)
35)
SOJ
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A8
A7
A6
A5
A4
GND
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
RAS
V
V
V
WE
NC
NC
NC
A0
A1
A2
A3
CC
CC
CC
1
2
3
4
5
6
7
8
9
10
13
14
15
16
17
18
19
20
21
22
TSOP II
3.3V 256K X 16 CMOS DRAM (EDO)
Symbol
Alliance Semiconductor
t
t
t
t
I
I
t
CAA
OEA
t
RAC
CAC
CC1
CC2
RC
PC
44
43
42
41
40
39
38
37
36
35
32
31
30
29
28
27
26
25
24
23
AS4LC256K16EO-35
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A8
A7
A6
A5
A4
GND
200
35
17
50
15
70
7
7
• EDO page mode
• 5V I/O tolerant
• 512 refresh cycles, 8 ms refresh interval
• Read-modify-write
• LVTTL-compatible, three-state I/O
• JEDEC standard packages
• 3.3V power supply
• Latch-up current > 200 mA
Pin designation
Pin(s)
®
A0 to A8
RAS
I/O0 to I/O15
OE
UCAS
LCAS
WE
V
GND
- RAS-only or CAS-before-RAS refresh or self refresh
- 400 mil, 40-pin SOJ
- 400 mil, 40/44-pin TSOP II
CC
AS4LC256K16EO-45
200
45
20
10
10
80
17
60
Copyright © Alliance Semiconductor. All rights reserved.
Description
Address inputs
Row address strobe
Input/output
Output enable
Column address strobe, upper byte
Column address strobe, lower byte
Read/write control
Power (3.3V
Ground
AS4LC256K16EO
AS4LC256K16EO-60
0.3V)
P. 1 of 25
100
200
60
25
10
10
30
50
Unit
mA
µA
ns
ns
ns
ns
ns
ns

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AS4LC256K16EO-60TC Summary of contents

Page 1

... Features • Organization: 262,144 words × 16 bits • High speed - 45/60 ns RAS access time - 10/12/15/20 ns column address access time - 7/10/10 ns CAS access time • Low power consumption - Active: 280 mW max (AS4LC256K16EO-35) - Standby: 2.8 mW max, CMOS I/O (AS4LC256K16EO- 35) Pin arrangement SOJ V CC Vcc 1 40 GND I/O0 I/ I/O15 ...

Page 2

... The AS4LC256K16EO is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely low power and wide operating margins at component and system levels. The AS4LC256K16EO features a high speed page mode operation in which high speed read, write and read-write are performed on any of the 512 16 bits defined by the column address ...

Page 3

... IH , – – min SC - 0.2V – 400 CC – 50 2.4 – 0 -0.2V 400 -0.2V, CC Alliance Semiconductor AS4LC256K16EO Max Unit +7.0 V +7.0 V +7.0 V +70 °C +150 °C o 260 – mA -45 -60 Min Max Min Max Unit - -10 10 -10 ...

Page 4

... V.1.1 ® Alliance Semiconductor AS4LC256K16EO ...

Page 5

... Alliance Semiconductor AS4LC256K16EO -60 Min Max Unit Notes – 100 – ns – 20 – 75K ns – 10 – – 12 – ns – ...

Page 6

... Min Max Min Max 105 – 115 – 54 – 58 – 28 – 30 – 35 – 38 – 10 – 10 – 15 – 15 – Alliance Semiconductor AS4LC256K16EO -60 Min Max Unit Notes 0 – – – – – – – – ...

Page 7

... Min Max Min Max 100K – 100K – 85 – 85 – 30 – 30 – Alliance Semiconductor AS4LC256K16EO -60 Min Max Unit Notes 25 – – – – – 75K ns -60 Min Max ...

Page 8

... ASC t t RCS CAS RAD RAL Col Address t ROH t RAC OEA t CAC t CLZ Alliance Semiconductor AS4LC256K16EO (min) GND and V (max and greater than the RCD is greater than the RAD WS Falling input RRH t RCH t OEZ t ...

Page 9

... RC t RAS t t RCD RSH t CSH t CAS t ASC t t RAD RAL t CAH Column t RCS t ROH t OEA t RAC CAC t CLZ Alliance Semiconductor AS4LC256K16EO CRP t RCH t RRH t OEZ t OFF Data Out CRP t RCH t RRH t OEZ t OFF Data Out ...

Page 10

... WCS t DHR Data RAS t AWR t RAD t RAL Column Address t t CAH ASC t t RCD RSH t CSH t CAS t CWL t WCS t RWL t WCR DHR Data In Alliance Semiconductor AS4LC256K16EO WCH CRP t RPC t WCH ...

Page 11

... DHR Data RAS t CSH t RSH t t RCD CAS t RAL t AWR t t RAD ASC t CAH Col Address t WCR t CWL t OEH t DHR t t OED Data In Alliance Semiconductor AS4LC256K16EO RPC t CAS t CRP (OE controlled RWL ...

Page 12

... Data In t OED RAS t RAD t AWR t RAL Column Address t CAH t t RCD CAS t CSH t t ACS RSH t CWL t RWL OEH Data In Alliance Semiconductor AS4LC256K16EO (OE controlled CRP t RPC t RWL OEH (OE controlled CRP t RPC ...

Page 13

... RWC t RAS t RCD t CSH RAL t t RAD ASC t CAH Col Address t RWD t AWD t t RCS CWD t OEA t OEZ t RAC CAC t CLZ Data Out Alliance Semiconductor AS4LC256K16EO CAS t RSH t RWL t CWL OED Data ...

Page 14

... CSH t t RCD CAS t RSH t ACS t RAL t CAH Column Address t RWD t AWD t t CWD RCS t OEA t OED t Data In CLZ t CAC OEZ RAC Data Out t OED Data Out Alliance Semiconductor AS4LC256K16EO CRP t RPC t CWL t RWL ...

Page 15

... Lower Output 4/11/01; V.1.1 ® t RWC t RAS t CSH t t CAS RCD t RSH t RAL t CAH Column Address t RWD t AWD t CWD t OEA Data Out t OED t RAC CAC t t CLZ OEZ Data Out Alliance Semiconductor AS4LC256K16EO RPC t CRP t CWL t RWL Data ...

Page 16

... RCH t t OEA OEA t CAC t CLZ CAP Data Out CAP t t CAC OFF t OEZ Data Out 1 Alliance Semiconductor AS4LC256K16EO RSH CAH t RAL Col Address t RRH t RCH t OEA t CAP Data Out RSH CRP t CAS ...

Page 17

... CAH CAH t ASC Column WCH WCH t WCS CWL CWL Data Data In 1 Alliance Semiconductor AS4LC256K16EO t RWL CAH ASC RSH WCS t RAL Col Address t CWL WCH OEH t OED ...

Page 18

... DS t CLZ t CAC Data In Data In Data Out Data Out RAS t CHR t CSR t t RAS t CRP t t ARS RAH Row Address Alliance Semiconductor AS4LC256K16EO CRP t RAL t CAH Col Address t RWL t t CWD CWL t t AWD WP t OEA t CAP t CLZ t CAC ...

Page 19

... AWD t t CWD CWD t CWL OEA OEA CAP t OEZ t CLZ t OED CAC t CLZ Alliance Semiconductor AS4LC256K16EO RSH t t CAS CRP RAL t CAH t AWD t ASC RWL t CWD t t CWL CWL OEA ...

Page 20

... AR t ASC Col Address t RRH t OEA t CAC t CLZ Data Out RAS RP t RSH RAL t CAH Col Address t RWL t WCR WCH DHR Data In Alliance Semiconductor AS4LC256K16EO RAS PR t CHR t CRP t OFF t OEZ ...

Page 21

... CAC t CLZ Data Out t RCS t OEA t ROH t RWL t CWL WCH t WCS Data In t RCS t CWD t AWD t OEA CLZ t OEZ t CAC Data Out Alliance Semiconductor AS4LC256K16EO OFF t RRH t RCH CWL t OED Data ...

Page 22

... Ambient temperature (°C) Typical supply current I CC vs. ambient temperature 0.0 –55 – Ambient temperature (°C) Alliance Semiconductor AS4LC256K16EO t RPS t RPC t CHS Typical access time t RAC vs. load capacitance C a 100 100 150 ...

Page 23

... Output voltage (V) Typical EDO page mode current I CC4 vs. supply voltage 0.0 2.7 3.0 3.3 3.6 3.9 Supply voltage (V) Alliance Semiconductor AS4LC256K16EO Typical TTL stand-by current I CC2 vs. supply voltage V CC 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 2.7 3.0 3.3 3.6 3.9 Supply voltage (V) Typical output source current I OH vs. output voltage ...

Page 24

... 0–5° ƒ MHz, T Symbol Signals IN1 C RAS, UCAS, LCAS, WE IN2 C I/O0 to I/O15 I/O Alliance Semiconductor AS4LC256K16EO 44-pin TSOP II Min Max (mm) (mm) A 1 0.95 1.05 2 0.45 b 0.30 c 0.127 (typical) 18.54 D 18.28 E 10.03 10.29 H 11.56 11. 0.80 (typical) ...

Page 25

... Plastic SOJ, 400 mil, 40-pin AS4LC256K16E0-35JC TSOP II, 400 mil, 40/44-pin AS4LC256K16EO-35TC Part numbering system AS4LC 256K16E0 3.3V DRAM prefix Device number 4/11/01; V.1.1 ® AS4LC256K16E0-45JC AS4LC256K16EO-45TC –XX X Package SOJ RAS access time T = TSOP II Alliance Semiconductor AS4LC256K16EO 60 ns AS4LC256K16EO-60JC AS4LC256K16EO-60TC C Commercial temperature range, 0° ° ...

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