K4S281632C-TC1H Samsung, K4S281632C-TC1H Datasheet

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... K4S281632C 128Mbit SDRAM * Samsung Electronics reserves the right to change products or specification without notice 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Mar. 2000 CMOS SDRAM Rev. 0.0 Mar. 2000 ...

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... K4S281632C Revision History Revision 0.0 (March 21, 2000) • Changed tOH of K4S280432C-TC75/TL75 from 2.7ns to 3.0ns. • Deleted -10 and -80 speed specification. CMOS SDRAM Rev. 0.0 Mar. 2000 ...

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... CKE * Samsung Electronics reserves the right to change products or specification without notice. GENERAL DESCRIPTION The K4S281632C is 134,217,728 bits synchronous high data rate Dynamic RAM organized 2,097,152 words by 16 bits, fabricated with SAMSUNG s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle ...

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... K4S281632C PIN CONFIGURATION (Top view) PIN FUNCTION DESCRIPTION Pin Name CLK System clock CS Chip select CKE Clock enable Address Bank select address 0 1 RAS Row address strobe CAS Column address strobe WE Write enable L(U)DQM Data input/output mask DQ ~ Data input/output ...

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... K4S281632C ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on V supply relative to Vss DD Storage temperature Power dissipation Short circuit current Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. ...

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... CC3 Operating current I CC4 (Burst mode) Refresh current I CC5 Self refresh current I CC6 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. K4S281632C-TC** 4. K4S281632C-TL** 5. Unless otherwise noted, input swing IeveI is CMOS Test Condition Burst length = (min ...

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... K4S281632C AC OPERATING TEST CONDITIONS Parameter AC input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition Output 870 (Fig output load circuit OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) Parameter ...

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... K4S281632C AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter CAS latency=3 CLK cycle time CAS latency=2 CAS latency=3 CLK to valid output delay CAS latency=2 CAS latency=3 Output data hold time CAS latency=2 CLK high pulse width CLK low pulse width Input setup time ...

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... K4S281632C IBIS SPECIFICATION I Cha.racteristics (Pull-up) OH 100MHz 100MHz Voltage 133MHz 133MHz Min Max (V) I (mA) I (mA) 3.45 -2.4 3.3 -27.3 3.0 0.0 -74.1 2.6 -21.1 -129.2 2.4 -34.1 -153.3 2.0 -58.7 -197.0 1.8 -67.3 -226.2 1.65 -73.0 -248.0 1.5 -77.9 -269.7 1.4 -80.8 -284.3 1.0 -88.6 -344.5 0.0 -93.0 -502.4 I Characteristics (Pull-down) OL 100MHz 100MHz Voltage 133MHz 133MHz Min Max (V) I (mA) I (mA) 0.0 0.0 0.0 0.4 27.5 70.2 0.65 41.8 107.5 0.85 51.6 133.8 1.0 58.0 151.2 1.4 70.7 187.7 1.5 72.9 194.4 1.65 75.4 202.5 1.8 77.0 208.6 1 ...

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... K4S281632C V Clamp @ CLK, CKE, CS, DQM & (V) I (mA) DD 0.0 0.0 0.2 0.0 0.4 0.0 0.6 0.0 0.7 0.0 0.8 0.0 0.9 0.0 1.0 0.23 1.2 1.34 1.4 3.02 1.6 5.06 1.8 7.35 2.0 9.83 2.2 12.48 2.4 15.30 2.6 18.31 V Clamp @ CLK, CKE, CS, DQM & (V) I (mA) SS -2.6 -57.23 -2.4 -45.77 -2.2 -38.26 -2.0 -31.22 -1.8 -24.58 -1.6 -18.37 -1.4 -12.56 -1.2 -7.57 -1.0 -3.37 -0.9 -1.75 -0.8 -0.58 -0.7 -0.05 -0.6 0.0 -0.4 0.0 -0.2 0.0 0.0 0.0 Minimum V clamp current DD (Referenced Voltage I (mA) Minimum V clamp current -10 -20 -30 -40 -50 -60 Voltage I (mA) Rev. 0.0 Mar. 2000 ...

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... K4S281632C SIMPLIFIED TRUTH TABLE Command Register Mode register set Auto refresh Entry Refresh Self fefresh Bank active & row addr. Read & Auto precharge disable column address Auto precharge enable Write & Auto precharge disable column address Auto precharge enable Burst stop ...