SI9161 Vishay Semiconductors, SI9161 Datasheet

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SI9161

Manufacturer Part Number
SI9161
Description
Manufacturer
Vishay Semiconductors
Datasheet
FEATURES
• Si9160 architecture optimized for “light-load” efficiency
• High Frequency Switching (up to 2 MHz)
• Optimized Output Drive Current (300 mA)
DESCRIPTION
The Si9161 Optimized-Efficiency Controller for RF Power
Amplifier Boost Converter is a fixed-frequency, pulse- width-
modulated power conversion controller designed for use with
the Si6801 application specific MOSFET. The Si9161 and the
Si6801 are optimized for high efficiency switched-mode power
conversion at 1 MHz and over. The device has an enable pin
which can be used to put the converter in a low-current mode
compatible with the standby mode of most cellular phones. It
has a light-load pin which enables circuitry optimizing
efficiency at loads typical of receive operation. A wide
bandwidth feedback amplifier minimizes transient response
time allowing the device to meet the instantaneous current
demands of today’s digital protocols. The input voltage range
accommodates
configurations.
APPLICATION CIRCUIT
FaxBack 408-970-5600, request 70747
www.siliconix.com
minimal
Optimized-Efficiency Controller for RF Power
size
and
Amplifier Boost Converter
cost
battery
pack
• Standby Mode
• Wide Bandwidth Feedback Amplifier
• Single-Cell LiIon and Three-cell NiCd or NiMH Operation
Frequency control in switching is important to noise
management techniques in RF communications. The Si9161
is easily synchronized for high efficiency power conversion at
frequencies in excess of 1 MHz.
Optimizing the controller and the synchronous FETs results in
the highest conversion efficiency over a wide load range at the
switching frequencies of interest (1 MHz or greater). It also
minimizes the overshoot and gate ringing associated with
drive current and gate charge mismatches.
When disabled, the converter requires less than 330 µA. This
capability minimizes the impact of the converter on battery life
when the phone is in the standby mode.
Finally, operating voltage is optimized for LiIon battery
operation (2.7 V to 4.5 V) and can also be used with three-cell
NiCd or NiMH (3 V to 3.6 V), as well as four-cell NiCd or NiMH
(4 V to 4.8 V) battery packs.
Vishay Siliconix
S-60752—Rev. B, 05-Apr-99
Si9161
Si9161
1

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SI9161 Summary of contents

Page 1

... Amplifier Boost Converter is a fixed-frequency, pulse- width- modulated power conversion controller designed for use with the Si6801 application specific MOSFET. The Si9161 and the Si6801 are optimized for high efficiency switched-mode power conversion at 1 MHz and over. The device has an enable pin which can be used to put the converter in a low-current mode compatible with the standby mode of most cellular phones ...

Page 2

... Si9161 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Voltages Referenced to GND ±0.3 V GND Linear Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0 Logic Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0 Peak Output Drive Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150 C Exposure to Absolute Maximum rating conditions for extended periods may affect device reliability. Stresses above Absolute Maximum rating may cause permanent damage ...

Page 3

... ENABLE = Low Vishay Siliconix Limits B Suffix - Min Typ Max GND = -10 5.15 5 0.06 0.15 = 5.3 V -300 -250 = 5.3 V 250 300 40 = 6.0 V 1.4 0 -1.0 1.0 1.4 0.8 2.4 -1.0 1 -100 100 = 2.7 V 1.1 1.5 = 4.5 V 1.6 2.3 250 330 S-60752—Rev. B, 05-Apr-99 Si9161 b Unit µ µA µs V µ µA 3 ...

Page 4

... Si9161 Vishay Siliconix TYPICAL CHARACTERISTICS ( S-60752—Rev. B, 05-Apr- 25°C UNLESS OTHERWISE NOTED) DD FaxBack 408-970-5600, request 70747 www.siliconix.com ...

Page 5

... TYPICAL CHARACTERISTICS ( FaxBack 408-970-5600, request 70747 www.siliconix.com , 25°C UNLESS OTHERWISE NOTED) DD Si9161 Vishay Siliconix S-60752—Rev. B, 05-Apr-99 5 ...

Page 6

... Si9161 Vishay Siliconix PIN CONFIGURATIONS PIN DESCRIPTION Pin The positive power supply for all functional blocks except output driver. A bypass capacitor of 0.1 µF (minimum) is recommended. Pin logic high on this pin allows normal operation. A logic low places the chip in light-load optimized-efficiency mode. In light-load mode, the oscillator frequency is reduced and D goes high, disabling synchronous rectification ...

Page 7

... FUNCTIONAL BLOCK DIAGRAM TIMING WAVEFORMS Note: Timing waveforms are not to scale. FaxBack 408-970-5600, request 70747 www.siliconix.com Pin 16 The positive terminal of the power supply which powers the CMOS output drivers. A bypass capacitor is required. and Si9161 Vishay Siliconix S-60752—Rev. B, 05-Apr-99 7 ...

Page 8

... C graph on page 5 in the Typical Characteristics section shows the typical C osc frequency. Si9161 oscillator frequency can be easily synchronized to external frequency as long as external switching frequency is higher than the internal oscillator frequency. The synchronization circuit is a series resistor and capacitor fed into the C synchronization pulse should be greater than 1 ...

Page 9

... The Si6801 will switch on and off in <5 ns, see Figure 3. Note the Speed These MOSFETs have switching speeds of <5 ns. This high speed is due to the fast, high current output drive of the Si9161 and the optimized gate charge of the Si6801. FIGURE 3. Gate Switching Times Si9161 Vishay Siliconix S-60752— ...

Page 10

... FIGURE 5. Continous and Discontinous Inductance Curve Designed with small surface mount inductors and capacitors, the Si9161 solution can fit easily within a small space such as a battery pack. Another distinct advantage of a smaller converter size is that it reduces the noise generating area by reducing the high current path ...

Page 11

... The switching fundamental can be synchronized to a known frequency, e.g. 812.5 kHz which is GSM/DCS system clock, or 1.23 MHz which is the channel spacing frequency for CDMA, etc. FIGURE 8. Spectrum response for the Si9161 demo board output voltage FaxBack 408-970-5600, request 70747 www.siliconix.com FIGURE 7. Output noice of the Si9160 demo board Figures 7 through 9 show the output noise and output spectrum analysis ...

Page 12

... Even though the high frequency MOSFET has been designed with minimum gate charge, it still presents significant power loss during the light load conditions. In order to minimize this switching loss, Si9161 is designed with a light load efficiency S-60752—Rev. B, 05-Apr-99 12 FIGURE 9. Higher resolution of noise spectrum improvement pin which decreases the switching frequency by 8 ...

Page 13

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...

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