TC551001BPL TOSHIBA Semiconductor CORPORATION, TC551001BPL Datasheet
TC551001BPL
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TC551001BPL Summary of contents
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... When CE1 is a logical high, or CE2 is low, the device is placed in a low power standby mode in which the standby current typically. The TC551001BPL has three control inputs. Chip Enable inputs (CE1, CE2) allow for device selection and data retention control, while an Output Enable input (OE) provides fast memory access ...
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... TC551001BPL/BFL/BFTL/BTRL-70L/85L Block Diagram Operating Mode OPERATION MODE CE1 Read L Write L Output Deselect L H Standby * * Maximum Ratings SYMBOL ITEM V Power Supply Voltage DD V Input Voltage IN V Input and Output Voltage I/O P Power Dissipation D T Soldering Temperature (10s) SOLDER T Storage Temperature STRG T Operating Temperature OPR * -3 ...
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... CE2 DD Capacitance (Ta = 25º 1MHz) SYMBOL PARAMETER C Input Capacitance IN C Output Capacitance OUT Note: This parameter is periodically sampled and is not 100% tested. TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC Static RAM TC551001BPL/BFL/BFTL/BTRL-70L/85L MIN. TYP. MAX. UNIT 4.5 5.0 5.5 2.2 – 0 -0.3* – ...
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... MIN. MAX. 70 – 85 – 70 – – 70 – – 70 – – 35 – 10 – – 5 – 25 – – 25 – 10 – 10 TC551001BPL/BFL/BFTL/BTRL -70L -85L MIN. MAX. MIN. MAX. 70 – – – – – 0 – 25 – 5 – – – ...
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... SR01020795 Timing Waveforms (1) Read Cycle (4) Write Cycle 1 (R/W Controlled Write) TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC Static RAM TC551001BPL/BFL/BFTL/BTRL-70L/85L 5 . ...
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... TC551001BPL/BFL/BFTL/BTRL-70L/85L (4) Write Cycle 2 (CE1 Controlled Write) (4) Write Cycle 3 (CE2 Controlled Write) 6 TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC Static RAM SR01020795 . ...
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... Outputs remain in a high impedance state. 4. Assuming that OE is High for a Write Cycle, Outputs are in a high impedance state during this period. 5. The I/O may be in the output state during this time, input signals of opposite phase must not be applied. TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC Static RAM TC551001BPL/BFL/BFTL/BTRL-70L/85L 7 . ...
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... TC551001BPL/BFL/BFTL/BTRL-70L/85L Data Retention Characteristics ( SYMBOL PARAMETER V Data Retention Supply Voltage DH I Standby Current DDS2 t Chip Deselect to Data Retention Mode CDR t Recovery Time (max CE1 Controlled Data Retention Mode CE2 Controlled Data Retention Mode Notes the CE1 controlled data retention mode, minimum standby current is achieved under the condition CE2 ...
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... SR01020795 Outline Drawing DIP32-P-600 TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC Static RAM TC551001BPL/BFL/BFTL/BTRL-70L/85L Unit ...
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... TC551001BPL/BFL/BFTL/BTRL-70L/85L Outline Drawing SOP32-P-525 10 TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC Static RAM SR01020795 Unit ...
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... SR01020795 Outline Drawing TSOP32-P-0820 TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC Static RAM TC551001BPL/BFL/BFTL/BTRL-70L/85L Unit ...
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... TC551001BPL/BFL/BFTL/BTRL-70L/85L Outline Drawing TSOP32-P-0820A 1. This technical data may be controlled under U.S. Export Administration Regulations and may be subject to the approval of the U.S. Department of Commerce prior to export. Any export or re-export, directly or indi- rectly, in contravention of the U.S. Export Administration Regulations is strictly prohibited. 2. LIFE SUPPORT POLICY Toshiba products described in this document are not authorized for use as critical components in life support systems without the written consent of the appropriate officer of Toshiba America, Inc. Life support sys- tems are either systems intended for surgical implant in the body or systems which sustain life ...
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