MMDF2P02ER2 Motorola, MMDF2P02ER2 Datasheet

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MMDF2P02ER2

Manufacturer Part Number
MMDF2P02ER2
Description
TMOS P-channel field effect transistor
Manufacturer
Motorola
Datasheet

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's
Medium Power Surface Mount Products
TMOS Dual P-Channel
Field Effect Transistors
which utilize Motorola’s TMOS process. These miniature surface
mount MOSFETs feature ultra low R DS(on) and true logic level
performance. They are capable of withstanding high energy in the
avalanche and commutation modes and the drain–to–source diode
has a low reverse recovery time. MiniMOS devices are designed
for use in low voltage, high speed switching applications where
power efficiency is important. Typical applications are dc–dc
converters, and power management in portable and battery
powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor
controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
(1) Negative sign for P–Channel device omitted for clarity.
(2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, E–FET and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
REV 5
MAXIMUM RATINGS
DEVICE MARKING
Motorola TMOS Power MOSFET Transistor Device Data
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ T A = 25 C
Drain Current
Drain Current
Total Power Dissipation @ T A = 25 C (2)
Derate above 25 C
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting T J = 25 C
Thermal Resistance, Junction to Ambient (2)
Maximum Lead Temperature for Soldering Purposes, 0.0625 from case for 10 seconds
F2P02
MMDF2P02ER2
MiniMOS
Motorola, Inc. 1996
Ultra Low R DS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, with Soft Recovery
I DSS Specified at Elevated Temperatures
Avalanche Energy Specified
Mounting Information for SO–8 Package Provided
(V DD = 20 Vdc, V GS = 10 Vdc, Peak I L = 7.0 Apk, L = 10 mH, R G = 25 )
Device
devices are an advanced series of power MOSFETs
— Continuous @ T A = 100 C
— Single Pulse (t p
(T J = 25 C unless otherwise noted) (1)
Reel Size
ORDERING INFORMATION
Data Sheet
13
10 s)
12 mm embossed tape
Tape Width
Rating
Quantity
2500
G
D
S
Symbol
T J , T stg
V DSS
R JA
Source–1
Source–2
V GS
E AS
I DM
P D
T L
MMDF2P02E
I D
I D
Gate–1
Gate–2
R DS(on) = 0.250 OHM
DUAL TMOS MOSFET
CASE 751–05, Style 11
2.5 AMPERES
25 VOLTS
– 55 to 150
Order this document
Top View
SO–8
1
2
3
4
Value
62.5
245
260
by MMDF2P02E/D
2.5
1.7
2.0
25
13
16
20
8
7
6
5
mW/ C
Drain–1
Drain–1
Drain–2
Drain–2
Unit
Vdc
Vdc
Adc
Apk
C/W
mJ
W
C
C
1

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MMDF2P02ER2 Summary of contents

Page 1

... Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max. ORDERING INFORMATION Device Reel Size MMDF2P02ER2 embossed tape Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — ...

Page 2

... S = 2.0 Adc Vdc 2.0 Adc Vdc 2.0 Adc Vdc /dt = 100 /dt = 100 /dt = 100 2%. Motorola TMOS Power MOSFET Transistor Device Data Min Typ Max Unit Vdc 25 — — — 2.2 — ...

Page 3

... 1.5 1.0 0.5 0 – 50 – JUNCTION TEMPERATURE ( C) Figure 5. On–Resistance Variation with Temperature Motorola TMOS Power MOSFET Transistor Device Data 1 GATE–TO–SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics 0 ...

Page 4

... Figure 8. Gate–to–Source and Drain–to–Source Voltage versus Total Charge VGS = 0 V 1.6 1.2 0.8 0.4 0 100 0.6 0 SOURCE–TO–DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage Motorola TMOS Power MOSFET Transistor Device Data ...

Page 5

... R DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 12. Maximum Rated Forward Biased Safe Operating Area Motorola TMOS Power MOSFET Transistor Device Data di/dt = 300 A/ s Standard Cell Density t rr High Cell Density TIME Figure 11. Reverse Recovery Time ( ...

Page 6

... Figure 15. Diode Reverse Recovery Waveform 6 Normalized 10s. Chip 0.0175 0.0710 0.0154 F 0.0854 F 1.0E–02 1.0E–01 1.0E+00 t, TIME (s) Figure 14. Thermal Response di/ 0. Motorola TMOS Power MOSFET Transistor Device Data 0.2706 0.5776 0.7086 0.3074 F 1.7891 F 107.55 F Ambient 1.0E+01 1.0E+02 1.0E+03 TIME ...

Page 7

... When using infrared heating with the reflow soldering method, the difference shall be a maximum Motorola TMOS Power MOSFET Transistor Device Data between the board and the package. With the correct pad geometry, the packages will self–align when subjected to a solder reflow process ...

Page 8

... C 160 C 150 C SOLDER IS LIQUID FOR SECONDS 100 C 140 C (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES Figure 16. Typical Solder Heating Profile Motorola TMOS Power MOSFET Transistor Device Data STEP 6 STEP 7 VENT COOLING 205 TO 219 C PEAK AT SOLDER JOINT T MAX ...

Page 9

... G –T– SEATING PLANE D 8X 0.25 (0.010 Motorola TMOS Power MOSFET Transistor Device Data PACKAGE DIMENSIONS CASE 751–05 SO–8 ISSUE P MMDF2P02E NOTES: 1. DIMENSIONS A AND B ARE DATUMS AND DATUM SURFACE. 2. DIMENSIONING AND TOLERANCING PER ANSI Y14 ...

Page 10

... Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “ ...

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