UPA1802GR-9JG NEC, UPA1802GR-9JG Datasheet

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UPA1802GR-9JG

Manufacturer Part Number
UPA1802GR-9JG
Description
N-channel enhancement type MOS FET
Manufacturer
NEC
Datasheet
1.UPA1802GR-9JG.pdf (8 pages)
Document No.
Date Published
Printed in Japan
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Remark
DESCRIPTION
driven directly by a 2.5-V power source.
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1. PW
The
The PA1802 features a low on-state resistance and
Can be driven by a 2.5-V power source
Low on-state resistance
R
R
R
DS(on)1
DS(on)2
DS(on)3
PART NUMBER
PA1802GR-9JG
2. Mounted on ceramic substrate of 5000 mm
PA1802 is a switching device which can be
D12966EJ1V0DS00 (1st edition)
January 2000 NS CP(K)
= 23 m
= 25 m
= 32 m
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
10 s, Duty Cycle
MAX. (V
MAX. (V
MAX. (V
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Note1
Note2
GS
GS
GS
= 4.5 V, I
= 4.0 V, I
= 2.5 V, I
Power TSSOP8
PACKAGE
1 %
D
D
D
The mark • • • • shows major revised points.
A
= 3.5 A)
= 3.5 A)
= 3.5 A)
= 25°C)
I
FOR SWITCHING
I
D(pulse)
V
V
D(DC)
T
T
P
DSS
GSS
DATA SHEET
stg
ch
T
2
–55 to +150
x 1.1 mm
±7.0
MOS FIELD EFFECT TRANSISTOR
150
±12
±28
2.0
20
8
1
3.15 ±0.15
3.0 ±0.1
0.27
0.65
°C
°C
W
V
V
A
A
+0.03
–0.08
PACKAGE DRAWING (Unit : mm)
5
4
0.8 MAX.
0.10 M
1, 5, 8
2, 3, 6, 7: Source
4
: Drain
: Gate
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
1.2 MAX.
6.4 ±0.2
4.4 ±0.1
PA1802
©
1.0±0.05
0.1±0.05
3
Source
Drain
+5
–3
Body
Diode
0.5
0.6
1.0 ±0.2
1997, 2000
0.25
0.1
+0.15
–0.1

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UPA1802GR-9JG Summary of contents

Page 1

... Duty Cycle 2. Mounted on ceramic substrate of 5000 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage • • • • Forward Transfer Admittance • • • • Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay ...

Page 3

TYPICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 Ambient Temperature - ˚C A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 30 Pulsed V ...

Page 4

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 2 125 ˚ ˚C 25 ˚ ˚ 0 Drain Current - A D ...

Page 5

SWITCHING CHARACTERISTICS 1000 100 4.0 V GS(on 0 Drain Current - A D DYNAMIC INPUT CHARACTERISTICS 7.0 ...

Page 6

Data Sheet D12966EJ1V0DS00 PA1802 ...

Page 7

Data Sheet D12966EJ1V0DS00 PA1802 7 ...

Page 8

... Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance ...

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