N28F020-120 Intel Corporation, N28F020-120 Datasheet
N28F020-120
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N28F020-120 Summary of contents
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X 8) CMOS FLASH MEMORY n Flash Electrical Chip-Erase 2 Second Typical Chip-Erase n Quick-Pulse Programming Algorithm 10 µS Typical Byte-Program 4 second Chip-Program n 100,000 Erase/Program Cycles n 12.0 V ± High-Performance Read ...
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... Copies of documents which have an ordering number and are referenced in this document, or other Intel literature, may be obtained from: Intel Corporation P.O. Box 5937 Denver, CO 80217-9808 or call 1-800-548-4725 or visit Intel’s website at http://www.intel.com Copyright © Intel Corporation 1996, 1997. * Third-party brands and names are the property of their respective owners. ...
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APPLICATIONS ..............................................5 2.0 PRINCIPLES OF OPERATION .......................8 2.1 Integrated Stop Timer ..................................8 2.2 Write Protection ...........................................9 2.2.1 Bus Operations......................................9 2.2.1.1 Read...............................................9 2.2.1.2 Output Disable ..............................10 2.2.1.3 Standby ........................................10 2.2.1.4 Intelligent Identifier Operation .......10 2.2.1.5 Write .............................................10 2.2.2 Command Definitions ...
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REVISION HISTORY Number -004 Removed Preliminary Classification. Clarified AC and DC test conditions. Added “dimple” TSOP package. Corrected serpentine layout. -005 Added –80V05, –90 ns speed grades. Added extended temperature devices. Corrected AC Waveforms. -006 Added –70 ...
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APPLICATIONS The 28F020 flash memory provides nonvolatility along with the capability to perform over 100,000 electrical chip-erasure/reprogram cycles. These features make the 28F020 an innovative alternative to disk, EEPROM, and battery-backed static RAM. Where periodic updates of code and ...
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State WE# Control Command Register Integrated Stop Timer CE# OE Figure 1. 28F020 Block Diagram Symbol Type A –A INPUT ADDRESS INPUTS for memory addresses. Addresses are 0 ...
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Figure 2. 28F020 Pin Configurations 28F020 7 ...
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System Bus - - Address Decoded Chip Select # BHE # Figure 3. 28F020 in an 80C186 System 2.0 PRINCIPLES OF OPERATION Flash ...
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Table 2. 28F020 Bus Operations Mode Read Output Disable READ- Standby ONLY Intelligent Identifier (2) (Mfr) Intelligent Identifier (2) (Device) Read READ/ Output Disable (5) WRITE Standby Write NOTES: 1. Refer to DC Characteristics . When ...
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Output Disable With OE logic-high level (V ), output from IH the device is disabled. Output pins are placed in a high-impedance state. 2.2.1.3 Standby With CE logic-high level, the standby operation disables most ...
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Table 3. Command Definitions Bus Cycles Command Req’d Operation Read Memory 1 Write Read Intelligent 3 Write Identifier Codes (4) Set-Up 2 Write (5) Erase/Erase (5) Erase Verify 2 Write Set-Up Program/ 2 Write (6) Program (6) Program Verify 2 ...
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The 28F020 contains an intelligent identifier operation to supplement traditional programming methodology. The operation initiated by writing 90H into the command register. Following the command Write, a read cycle from address 0000H retrieves the manufacturer code of 89H. A ...
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Programming then proceeds to the next desired byte location. Figure 4, the 28F020 Quick-Pulse Programming Algorithm flowchart, illustrates how commands are combined with bus operations to ...
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Start (4) Programming (1) Apply V PPH PLSCNT = 0 Write Set-Up Program Cmd Write Program Cmd (A/D) Time Out 10 µs Write Program Verify Cmd Time Out 6 µs Read Data from Device N Verify Data Y N ...
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Start Erasure Y Data = 00H? N Program All Bytes to 00H (1) Apply V PPH ADDR = 00H PLSCNT = 0 Write Erase Set-Up Cmd Write Erase Cmd Time Out 10 ms Write Erase Verify Cmd Time Out ...
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DESIGN CONSIDERATIONS 3.1 Two-Line Output Control Flash memories are often used in larger memory arrays. Intel provides two read control inputs to accommodate multiple memory connections. Two- line control provides for: a. the lowest possible memory power dissipation ...
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Table 4. 28F020 Typical Update Power Dissipation Operation Array Program/Program Verify Array Erase/Erase Verify One Complete Cycle NOTES: 1. Formula to calculate typical Program/Program Verify Power = [V t × I typical × # Bytes × typical # ...
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ELECTRICAL SPECIFICATIONS 4.1 Absolute Maximum Ratings* Operating Temperature During Read .........................0 °C to +70 °C During Erase/Program ..........0 °C to +70 °C Operating Temperature During Read .....................–40 °C to +85 °C During Erase/Program ......–40 °C to +85 °C ...
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DC Characteristics—TTL/NMOS Compatible—Commercial Products Symbol Parameter Notes I Input Leakage 1 LI Current I Output Leakage 1 LO Current I V Standby 1 CCS CC Current I V Active 1 CC1 CC Read Current CC2 ...
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DC Characteristics—TTL/NMOS Compatible—Commercial Products (Continued) Symbol Parameter Notes V Input Low IL Voltage V Input High IH Voltage V Output Low OL Voltage V Output High OH1 Voltage V A Intelligent ID 9 Identifier Voltage I A Intelligent ...
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DC Characteristics—CMOS Compatible—Commercial Products Symbol Parameter Notes I V Active Read 1 CC1 CC Current CC2 CC Programming Current I V Erase 1, 2 CC3 CC Current I V Program 1, 2 CC4 CC Verify ...
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DC Characteristics—CMOS Compatible—Commercial Products Symbol Parameter Notes V Output High OH1 Voltage V OH2 V A Intelligent ID 9 Identifier Voltage I A Intelligent Identifier Current V V during PPL PP Read-Only Operations V ...
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DC Characteristics—TTL/NMOS Compatible—Extended Temperature Products (Continued) Symbol Parameter Notes I V Erase 1, 2 CC3 CC Current I V Program 1, 2 CC4 CC Verify Current I V Erase 1, 2 CC5 CC Verify Current I V Leakage 1 ...
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DC Characteristics—TTL/NMOS Compatible—Extended Temperature Products (Continued) Symbol Parameter Notes V A Intelligent ID 9 Identifier Voltage I A Intelligent Identifier Current V V during PPL PP Read-Only Operations V V during PPH PP Read/Write ...
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DC Characteristics—CMOS Compatible—Extended Temperature Products (Continued) Symbol Parameter Notes I V Program CC4 CC Verify Current I V Erase Verify 1, 2 CC5 CC Current I V Leakage 1 PPS PP Current I V Read 1 PP1 ...
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DC Characteristics—CMOS Compatible—Extended Temperature Products (Continued) Symbol Parameter Notes I A Intelligent Identifier Current V V during Read- PPL PP Only Operations V V during PPH PP Read/Write Operations V V Erase/Write LKO CC ...
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Input Test Points 0.8 0.45 AC test inputs are driven for a Logic “1” OH TTL and V (0. for a Logic “0.” Input timing begins at OL TTL V (2.0 ...
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AC Characteristics—Read Only Operations—Commercial and Extended Temperature Products Versions Symbol Characteristics Notes t /t Read Cycle Time AVAV Chip Enable Access ELQV t > Time Address Access AVQV t Time ACC t ...
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Figure 10. AC Waveforms for Read Operations 28F020 0245_10 29 ...
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AC Characteristics—Write/Erase/Program Only Operations Commercial and Extended Temperature Products Versions Symbol Characteristics Notes t / Write Cycle Time AVAV Address Set-Up AVWL t Time Address Hold Time WLAX ...
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NOTES: 1. Read timing characteristics during read/write operations are the same as during read-only operations. Refer to AC Characteristics for Read-Only Operations . 2. Guaranteed by design. 3. The integrated stop timer terminates the programming/erase operations, thus eliminating the need ...
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Figure 11. 28F020 Typical Programming Capability Figure 12. 28F020 Typical Program Time 0245_11 NOTE: Does not include Pre-Erase Program. Figure 13. 28F020 Typical Erase Capability NOTE: Does not include Pre-Erase Program. 0245_12 Figure 14. 28F020 ...
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Figure 15. AC Waveforms for Programming Operations 28F020 0245_15 33 ...
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Figure 16. AC Waveforms for Erase Operations 34 0245_16 ...
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AC Characteristics—Alternate CE# Controlled Writes Extended Temperature Products Versions Symbol Characteristics Notes t Write Cycle Time AVAV t Address Set-Up AVEL Time t Address Hold Time ELAX 5 t Data Set-Up Time DVEH 5 t Data Hold Time EHDX ...
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NOTES: 1. Read timing characteristics during read/write operations are the same as during read-only operations. Refer to AC Characteristics for Read-Only Operations. 2. Guaranteed by design. 3. The integrated stop timer terminates the programming/erase operations, thus eliminating the need ...
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NOTE: Alternative CE-Controlled Write Timings also apply to erase operations. Figure 17. Alternate AC Waveforms for Programming Operations 28F020 0245_17 37 ...
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... Please call the Intel Literature Center at (800) 548-4725 to request Intel documentation. International customers should contact their local Intel or distribution sales office. 2. Visit Intel’s World Wide Web home page at http://www.Intel.com for technical documentation and tools. 38 Access Speed (ns) Density 020 = 2 Mbit N28F020-90 P28F020-90 N28F020-120 P28F020-120 N28F020-150 P28F020-150 TN28F020-90 TN28F020-120 TN28F020-150 Document ...