MBM29LV004TC-90 Fujitsu, MBM29LV004TC-90 Datasheet

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MBM29LV004TC-90

Manufacturer Part Number
MBM29LV004TC-90
Description
MBM29LV004TC-904M (512K X 8) BIT
Manufacturer
Fujitsu
Datasheet

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MBM29LV004TC-90PTN-SFK
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FUJITSU SEMICONDUCTOR
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FLASH MEMORY
CMOS
4M (512K
MBM29LV004TC
Embedded Erase
FEATURES
• Single 3.0 V read, program, and erase
• Compatible with JEDEC-standard commands
• Compatible with JEDEC-standard world-wide pinouts
• Minimum 100,000 program/erase cycles
• High performance
• Sector erase architecture
• Boot Code Sector Architecture
• Embedded Erase
• Embedded Program
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
• Automatic sleep mode
• Low V
• Erase Suspend/Resume
• Sector protection
• Sector Protection Set function by Extended sector protection command
• Temporary sector unprotection
DATA SHEET
Minimizes system level power requirements
Uses same software commands as E
40-pin TSOP(I) (Package suffix: PTN – Normal Bend Type, PTR – Reversed Bend Type)
40-pin SON (Package suffix: PNS)
70 ns maximum access time
One 16K byte, two 8K bytes, one 32K byte, and seven 64K bytes
Any combination of sectors can be concurrently erased. Also supports full chip erase
T = Top sector
B = Bottom sector
Automatically pre-programs and erases the chip or any sector
Automatically writes and verifies data at specified address
Hardware method for detection of program or erase cycle completion
When addresses remain stable, automatically switch themselves to low power mode
Suspends the erase operation to allow a read data in another sector within the same device
Hardware method disables any combination of sectors from program or erase operations
Temporary sector unprotection via the RESET pin
CC
TM
write inhibit
and Embedded Program
TM
Algorithms
TM
Algorithms
2.5 V
TM
-70/-90/-12
are trademarks of Advanced Micro Devices, Inc.
2
PROMs
8) BIT
/MBM29LV004BC
-70/-90/-12
DS05-20864-3E

Related parts for MBM29LV004TC-90

MBM29LV004TC-90 Summary of contents

Page 1

... FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 4M (512K MBM29LV004TC FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E • Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP(I) (Package suffix: PTN – ...

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... MBM29LV004TC PACKAGE 40-pin plastic TSOP (I) Marking Side (FPT-40P-M06) 2 /MBM29LV004BC -70/-90/-12 40-pin plastic TSOP (I) Marking Side 40-pin plastic SON (LCC-40P-M02) -70/-90/-12 (FPT-40P-M07) ...

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... MBM29LV004TC GENERAL DESCRIPTION The MBM29LV004TC/BC are a 4M-bit, 3.0 V-only Flash memory organized as 512K bytes of 8 bits each. The MBM29LV004TC/BC are offered in a 40-pin TSOP(I) and 40-pin SON packages. These devices are designed to be programmed in-system with the standard system 3 for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. ...

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... Individual-sector, multiple-sector, or bulk-erase capability. • Individual or multiple-sector protection is user definable. 16K byte 8K byte 8K byte 32K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte MBM29LV004TC Sector Architecture 4 /MBM29LV004BC -70/-90/-12 7FFFFH 7BFFFH 79FFFH 77FFFH 6FFFFH 5FFFFH 4FFFFH 3FFFFH 2FFFFH ...

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... RY/BY Buffer State Control RESET Command Register CE OE Low V Detector /MBM29LV004BC -70/-90/-12 MBM29LV004TC/MBM29LV004BC +0.3 V -70 –0.3 V +0.6 V — –0 RY/BY Erase Voltage Generator Program Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer for Address Program/Erase Latch ...

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... MBM29LV004TC CONNECTION DIAGRAMS RESET 10 N.C. 11 RY/ ...

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... /MBM29LV004BC -70/-90/-12 (TOP VIEW) (Marking side MBM29LV004TC/BC 32 SON- LCC-40P-M02 -70/-90/- N. ...

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... Data Inputs/Outputs Chip Enable OE Output Enable WE Write Enable RY/BY Ready/Busy Output Hardware Reset Pin/Temporary Sector RESET Unprotection N.C. No Internal Connection V Device Ground SS V Device Power Supply CC MBM29LV004TC/004BC User Bus Operations ...

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... MBM29LV004TC ORDERING INFORMATION Standard Products Fujitsu standard products are available in several packages. The order number is formed by a combination of: MBM29LV004 T C -70 DEVICE NUMBER/DESCRIPTION MBM29LV004 4Mega-bit (512K 3.0 V-only Read, Program, and Erase /MBM29LV004BC -70/-90/-12 PTN PACKAGE TYPE PTN = 40-Pin Thin Small Outline Package (TSOP) Standard Pinout ...

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... FUNCTIONAL DESCRIPTION Read Mode The MBM29LV004TC/BC have two control functions which must be satisfied in order to obtain data at the outputs the power control and should be used for a device selection the output control and should be used to gate data to the output pins if a device is selected. ...

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... IL code (MBM29LV004TC = B5H and MBM29LV004BC = B6H). These two bytes/words are given in the tables 3.1 and 3.2. All identifiers for manufactures and device will exhibit odd parity with DQ order to read the proper device codes when executing the autoselect, A Table 3 ...

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... SA1 0 0 SA2 0 0 SA3 0 0 SA4 0 0 SA5 0 1 SA6 0 1 SA7 1 0 SA8 1 0 SA9 1 1 SA10 /MBM29LV004BC -70/-90/-12 Sector Address Tables (MBM29LV004TC ...

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... Refer to AC Write Characteristics and the Erase/Programming Waveforms for specific timing parameters. Sector Protection The MBM29LV004TC/BC feature hardware sector protection. This feature will disable both program and erase operations in any number of sectors (0 through 10). The sector protection feature is enabled using programming equipment at the user’s site. The devices are shipped with all sectors unprotected. Alternatively, Fujitsu may program and protect sectors in the factory prior to shiping the device ...

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... MBM29LV004TC Table 6 MBM29LV004TC/004BC Standard Command Definitions First Bus Bus Write Cycle Command Write Sequence Cycles Req’d Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Read/Reset 1 XXXH F0H Read/Reset 3 555H AAH 2AAH Autoselect 3 555H AAH 2AAH Program ...

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... MBM29LV004TC Table 7 MBM29LV004TC/BC Extended Command Definitions Bus Write Command Cycles Sequence Req’d Addr Set to 3 555H Fast Mode Fast Program XXXH (Note) Reset from Fast 2 XXXH 1 Mode* Extended Sector 4 XXXH 2 Protect* SPA: Sector address to be protected. Set sector address (SA) and (A SD: Sector protection verify data ...

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... Following the command write, a read cycle from address XX00H retrieves the manufacture code of 04H. A read cycle from address XX01H returns the device code (MBM29LV004TC = B5H and MBM29LV004BC = B6H). (See Tables 3.1 and 3.2.) All manufacturer and device codes will exhibit odd parity with DQ Sector state (protection or unprotection) will be informed by address XX02H ...

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... MBM29LV004TC Chip Erase Chip erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the “set-up” command. Two more “unlock” write cycles are then followed by the chip erase command. Chip erase does not require the user to program the device prior to erase. Upon executing the Embedded Erase Algorithm command sequence the devices will automatically program and verify the entire memory for an all zero data pattern prior to electrical erase (Preprogram function) ...

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... MBM29LV004TC Erase Suspend The Erase Suspend command allows the user to interrupt a Sector Erase operation and then perform data reads from or programs to a sector not being erased. This command is applicable ONLY during the Sector Erase operation which includes the time-out period for sector erase. The Erase Suspend command will be ignored if written during the Chip Erase operation or Embedded Program Algorithm ...

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... Algorithm is executed by writing program set-up command (A0H) and data write cycles (PA/PD). (Refer to the Figure 24 Extended algorithm.) (3) Extended Sector Protection In addition to normal sector protection, the MBM29LV004TC/BC has Extended Sector Protection as extended function. This function enable to protect sector by forcing V Unlike conventional procedure not necessary to force V RESET pin requires V for sector protection in this mode ...

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... MBM29LV004TC Write Operation Status Embedded Program Algorithm Embedded Erase Algorithm Erase Suspend Read (Erase Suspended Sector) In Progress Erase Erase Suspend Read Suspended (Non-Erase Suspended Sector) Mode Erase Suspend Program (Non-Erase Suspended Sector) Embedded Program Algorithm Embedded Erase Algorithm Exceeded Time Limits ...

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... DQ 6 Toggle Bit I The MBM29LV004TC/BC also feature the “Toggle Bit I” method to indicate to the host system that the Embedded Algorithms are in progress or completed. During an Embedded Program or Erase Algorithm cycle, successive attempts to read (OE toggling) data from the devices will result in DQ toggling between one and zero ...

Page 22

... MBM29LV004TC DQ 5 Exceeded Timing Limits DQ will indicate if the program or erase time has exceeded the specified limits (internal pulse count). Under 5 these conditions DQ will produce a “1”. This is a failure condition which indicates that the program or erase 5 cycle was not successfully completed. Data Polling DQ this condition ...

Page 23

... RY/BY Ready/Busy The MBM29LV004TC/BC provide a RY/BY open-drain output pin as a way to indicate to the host system that the Embedded Algorithms are either in progress or has been completed. If the output is low, the devices are busy with either a program or erase operation. If the output is high, the devices are ready to accept any read/ write or erase operation ...

Page 24

... MBM29LV004TC Data Protection The MBM29LV004TC/BC are designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transitions. During power up the devices automatically reset the internal state machine in the Read mode. Also, with its control register architecture, alteration of the memory contents only occurs after successful completion of specific multi-bus cycle command sequences ...

Page 25

... Supply Voltages CC MBM29LV004TC/BC-70................................................................. +3.0V to +3.6 V MBM29LV004TC/BC-90/-12........................................................... +2 +3.6 V Operating ranges define those limits between which the functionality of the devices are guaranteed. WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All the device’s electrical characteristics are warranted when the device is operated within these ranges ...

Page 26

... MBM29LV004TC MAXIMUM OVERSHOOT +0.6 V –0.5 V –2.0 V Figure +2.0 V Figure 2 +14.0 V +13 +0 This waveform is applied for A Figure 3 26 /MBM29LV004BC -70/-90/- Maximum Negative Overshoot Waveform Maximum Positive Overshoot Waveform OE, and RESET. 9 Maximum Positive Overshoot Waveform 2 ...

Page 27

... MBM29LV004TC DC CHARACTERISTICS Parameter Parameter Description Symbol I Input Leakage Current LI I Output Leakage Current OE, RESET Inputs Leakage 9 I LIT Current I V Active Current (Note 1) CC1 Active Current (Note 2) CC2 Current (Standby) CC3 Current (Standby, Reset) CC4 CC V Current ...

Page 28

... CE or OE, Whichever Occurs First — t RESET Pin Low to Read Mode READY Note: Test Conditions: Output Load: 1 TTL gate and 30 pF (MBM29LV004TC/BC-70) 1 TTL gate and 100 pF (MBM29LV004TC/BC-90/-12) Input rise and fall times Input pulse levels: 0 3.0 V Timing measurement reference level Input: 1.5 V Output:1 ...

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... Toggle and Data Polling Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Typ. Typ. Min. (Note 2) Min. ID Min. Min. Min. Min. Min. Min. Min. -70/-90/-12 MBM29LV004TC/BC Unit -70 -90 - 120 ...

Page 30

... Parameter Symbols JEDEC Standard — t Program/Erase Valid to RY/BY Delay BUSY — t Delay Time from Embedded Output Enable EOE Notes: 1. This does not include the preprogramming time. 2. This timing is for Sector Protection operation. 30 /MBM29LV004BC -70/-90/-12 Description Max. Max. -70/-90/-12 MBM29LV004TC/BC Unit -70 -90 - ...

Page 31

... MBM29LV004TC SWITCHING WAVEFORMS • Key to Switching Waveforms WAVEFORM Addresses OEH WE High-Z Outputs Figure 5.1 /MBM29LV004BC -70/-90/-12 INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Be Change Changing from from May Will Be Change Changing from from “H” or “L” ...

Page 32

... MBM29LV004TC Addresses RESET Outputs Figure 5.2 32 /MBM29LV004BC -70/-90/- Addresses Stable t ACC t RH High-Z AC Waveforms for Hardware Reset/Read Operations -70/-90/- Output Valid ...

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... MBM29LV004TC 3rd Bus Cycle Addresses 555H WPH t GHWL A0H Data Notes address of the memory location to be programmed data to be programmed at byte address the output of the complement of the data written to the device. ...

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... MBM29LV004TC Addresses Data Notes address of the memory location to be programmed data to be programmed at byte address the output of the complement of the data written to the device the output of the data written to the device. OUT 5. Figure indicates last two bus cycles out of four bus cycle sequence. ...

Page 35

... MBM29LV004TC Addresses 555H GHWL AAH Data t VCS the sector address for Sector Erase. Addresses = 555H for Chip Erase. Figure 8 AC Waveforms Chip/Sector Erase Operations /MBM29LV004BC -70/-90/-12 2AAH 555H 555H WPH t DH 55H ...

Page 36

... MBM29LV004TC Data Data Valid Data (The device has completed the Embedded operation.) 7 Figure 9 AC Waveforms for Data Polling during Embedded Algorithm Operations CE t OEH WE t OES OE DQ Data stops toggling. (The device has completed the Embedded operation.) ...

Page 37

... MBM29LV004TC -70/-90/- RY/BY Figure 11 RY/BY Timing Diagram during Program/Erase Operations WE RESET RY/BY Figure 12 RESET/RY/BY Timing Diagram /MBM29LV004BC The rising edge of the last WE signal Entire programming or erase operations t BUSY READY -70/-90/-12 37 ...

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... MBM29LV004TC VLHT VLHT WE CE Data t VCS V CC SAX : Sector Address for initial sector SAY : Sector Address for next sector Figure 13 38 /MBM29LV004BC -70/-90/-12 SAX t VLHT t WPP t OESP ...

Page 39

... MBM29LV004TC VIDR t VCS RESET VLHT RY/BY Figure 14 Temporary Sector Unprotection Timing Diagram Enter Erase Embedded Suspend Erasing WE Erase Erase Suspend Read Toggle DQ and with OE Note read from the erase-suspended sector. 2 /MBM29LV004BC -70/-90/-12 Program or Erase Command Sequence ...

Page 40

... MBM29LV004TC VCS RESET t VLHT t VIDR Add Data SPAX: Sector Address to be protected SPAY : Next Sector Address to be protected TIME-OUT : Time-Out window = 150 s (min) Figure 16 40 /MBM29LV004BC -70/-90/-12 SPAX TIME-OUT 60H 60H Extended Sector Protection Timing Diagram -70/-90/-12 SPAX ...

Page 41

... MBM29LV004TC EMBEDDED ALGORITHMS Increment Address Figure 17 /MBM29LV004BC -70/-90/-12 Start Write Program Command Sequence (See below) Data Polling Device No Last Address ? Yes Programming Completed Program Command Sequence (Address/Command): 555H/AAH 2AAH/55H 555H/A0H Program Address/Program Data Embedded Program TM Algorithm -70/-90/-12 41 ...

Page 42

... MBM29LV004TC EMBEDDED ALGORITHMS Chip Erase Command Sequence (Address/Command): 555H/AAH 2AAH/55H 555H/80H 555H/AAH 2AAH/55H 555H/10H 42 /MBM29LV004BC -70/-90/-12 Start Write Erase Command Sequence (See below) Data Polling or Toggle Bit Successfully Completed Erasure Completed Individual Sector/Multiple Sector Erase Command Sequence (Address/Command): 555H/AAH 2AAH/55H 555H/80H 555H/AAH ...

Page 43

... MBM29LV004TC Start Read (DQ 0 Addr Read (DQ 0 Addr Fail Note rechecked even Figure 19 /MBM29LV004BC -70/-90/- Address for programming 7 = Any of the sector addresses within the sector being erased during Yes sector erase or multiple = Data? erases operation. ...

Page 44

... MBM29LV004TC Note rechecked even changing to “1” /MBM29LV004BC -70/-90/-12 Start Read ( Addr. = “H” or “L” Toggle 6 ? Yes Yes Read ( Addr. = “H” or “L” Toggle 6 ? Yes Fail Pass = “1” because DQ ...

Page 45

... MBM29LV004TC -70/-90/-12 Increment PLSCNT No PLSCNT = 25? Yes Remove V from Write Reset Command Device Failed Figure 21 Sector Protection Algorithm /MBM29LV004BC Start Setup Sector Addr PLSCNT = RESET = ...

Page 46

... MBM29LV004TC Notes: 1. All protected sectors are unprotected. 2. All previously protected sectors are protected once again. Figure 22 46 /MBM29LV004BC -70/-90/-12 Start RESET = V ID (Note 1) Perform Erase or Program Operations RESET = V IH Temporary Sector Unprotection Completed (Note 2) Temporary Sector Unprotection Algorithm -70/-90/-12 ...

Page 47

... MBM29LV004TC FAST MODE ALGORITHM Device is Operating in Temporary Sector Unprotection Mode Increment PLSCNT No PLSCNT = 25? Yes Remove V from RESET ID Write Reset Command Device Failed Figure 23 /MBM29LV004BC -70/-90/-12 Start RESET = V ID Wait Extended Sector Protection Entry? Yes To Setup Sector Protection Write XXXH/60H PLSCNT = 1 ...

Page 48

... MBM29LV004TC FAST MODE ALGORITHM Increment Address Figure 24 48 /MBM29LV004BC -70/-90/-12 Start 555H/AAH 2AAH/55H 555H/20H XXXH/A0H Program Address/Program Data Data Polling Device No Verify Byte? Yes No Last Address ? Yes Programming Completed XXXH/90H XXXH/F0H Embedded Program TM Algorithm for Fast Mode -70/-90/-12 Set Fast Mode In Fast Program ...

Page 49

... MBM29LV004TC ERASE AND PROGRAMMING PERFORMANCE Parameter Min. Sector Erase Time Byte Programming Time Chip Programming Time Erase/Program Cycle 100,000 TSOP(I) PIN CAPACITANCE Parameter Parameter Description Symbol C Input Capacitance IN C Output Capacitance OUT C Control Pin Capacitance IN2 Note: Test conditions T = 25° 1.0 MHz ...

Page 50

... MBM29LV004TC PACKAGE DIMENSIONS 40-pin plastic TSOP(I) (FPT-40P-M06) LEAD No. 1 INDEX 20 0.15±0.05 (.006±.002) (.787±.008) (.724±.008) 19.00±0.20 (.748±.008) 1994 FUJITSU LIMITED F40007S-1C-1 C 40-pin plastic TSOP(I) (FPT-40P-M07) LEAD No. 1 INDEX 20 0.15±0.05 (.006±.002) 1994 FUJITSU LIMITED F40008S-1C-1 ...

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... MBM29LV004TC (Continued) 40-pin plastic SON (LCC-40P-M02) * 10.75±0.10(.423±.004) 40 10.10±0.20 (.398±.008) 10.00±0.10 (.394±.004) 1 INDEX 1997 FUJITSU LIMITED C40052S-4C-3 C /MBM29LV004BC -70/-90/-12 Note 1) Resin residue for * marked dimensions is 0.15 max on side. Note 2) Die pad geometry change with the models. 0.75(.030)MAX ...

Page 52

... MBM29LV004TC FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Corporate Global Business Support Division Electronic Devices KAWASAKI PLANT, 4-1-1, Kamikodanaka Nakahara-ku, Kawasaki-shi Kanagawa 211-8588, Japan Tel: 81(44) 754-3763 Fax: 81(44) 754-3329 http://www.fujitsu.co.jp/ North and South America FUJITSU MICROELECTRONICS, INC. Semiconductor Division ...

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