HY29LV160TT-90 Hynix Semiconductor, HY29LV160TT-90 Datasheet

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HY29LV160TT-90

Manufacturer Part Number
HY29LV160TT-90
Description
HY29LV160TT-9016 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
Manufacturer
Hynix Semiconductor
Datasheet

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KEY FEATURES
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Preliminary
Revision 1.2, May 2001
– Read, program and erase operations from
– Ideal for battery-powered applications
– 70, 80, 90 and 120 ns access time
Values At 5 Mhz)
– Automatic sleep mode current: 1 µA
– Standby mode current: 1 µA
– Read current: 9 mA
– Program/erase current: 20 mA
– One 16 KB, two 8 KB, one 32 KB and
– One 8 KW, two 4 KW, one 16 KW and
– Top or bottom boot block configurations
– Allows locking of a sector or sectors to
– Sectors lockable in-system or via
– Temporary Sector Unprotect allows
– Sector erase time: 0.25 sec typical for
– Chip erase time: 8 sec typical
– Byte program time: 9 µs typical
– Reduces programming time when issuing
and Erases Any Combination of Sectors
or the Entire Chip
– Suspends an erase operation to allow
– Erase Resume can then be invoked to
Verifies Data at Specified Addresses
Single Power Supply Operation
High Performance
Ultra-low Power Consumption (Typical
Flexible Sector Architecture:
Sector Protection
Fast Program and Erase Times
Unlock Bypass Program Command
Automatic Erase Algorithm Preprograms
Erase Suspend/Erase Resume
Automatic Program Algorithm Writes and
2.7 to 3.6 volts
versions
thirty-one 64 KB sectors in byte mode
thirty-one 32 KW sectors in word mode
available
prevent program or erase operations
within that sector
programming equipment
changes in locked sectors (requires high
voltage on RESET# pin)
each sector
multiple program command sequences
reading data from, or programming data
to, a sector that is not being erased
complete suspended erasure
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
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LOGIC DIAGRAM
– Provide software confirmation of
– Provides hardware confirmation of
Device to Reading Array Data
Interface (CFI) Specification
– Flash device parameters stored directly
– Allows software driver to identify and use
– Pinout and software compatible with
– Superior inadvertent write protection
– 48-pin TSOP and 48-ball FBGA packages
100,000 Write Cycles per Sector Minimum
Data# Polling and Toggle Bits
Ready/Busy# Pin
Hardware Reset Pin (RESET#) Resets the
Compliant With Common Flash Memory
Compatible With JEDEC standards
Space Efficient Packaging
2 0
completion of program and erase
operations
completion of program and erase
operations
on the device
a variety of different current and future
Flash products
single-power supply Flash devices
A[19:0]
C E #
O E #
W E #
R E S E T #
B Y T E #
D Q 1 5 / A - 1
DQ[14:8]
R Y / B Y #
DQ[7:0]
HY29LV160
8
7

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HY29LV160TT-90 Summary of contents

Page 1

KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications n High Performance – 70, 80, 90 and 120 ns access time versions n Ultra-low Power Consumption ...

Page 2

HY29LV160 GENERAL DESCRIPTION The HY29LV160 Mbit, 3 volt-only, CMOS Flash memory organized as 2,097,152 (2M) bytes or 1,048,576 (1M) words that is available in 48- pin TSOP and 48-ball FBGA packages. Word- wide data (x16) appears on ...

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BLOCK DIAGRAM A[19:0], A-1 STATE DQ[15: REGISTER CE# OE# BYTE# RESET# RY/BY# V DETECTOR C C SIGNAL DESCRIPTIONS ...

Page 4

HY29LV160 PIN CONFIGURATIONS A 6 A[ A[3] A[15] 1 A[14] 2 A[13] 3 ...

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CONVENTIONS Unless otherwise noted, a positive logic (active High) convention is assumed throughout this docu- ment, whereby the presence at a pin of a higher, more positive voltage (V ) causes assertion of the IH signal. A ‘#’ symbol following ...

Page 6

HY29LV160 Table 1. HY29LV160T (Top Boot Block) Memory Array Organization ...

Page 7

Table 2. HY29LV160B (Bottom Boot Block) Memory Array Organization ...

Page 8

HY29LV160 Table 3. HY29LV160 Normal Bus Operations ...

Page 9

Write Operation Certain operations, including programming data and erasing sectors of memory, require the host to write a command or command sequence to the HY29LV160. Writes to the device are performed by placing the byte or word address on the ...

Page 10

HY29LV160 Sector Protect Operation The hardware sector protection feature disables both program and erase operations in any sector or combination of sectors. This function can be implemented either in-system or by using program- ming equipment. The method intended for programming ...

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(Note: All sectors must be protected prior to unprotecting any sector) TRYCNT = Wait 1 us Write 0x60 to ...

Page 12

HY29LV160 DEVICE COMMANDS Device operations are initiated by writing desig- nated address and data command sequences into the device. Addresses are latched on the falling edge of WE# or CE#, whichever happens later. Data is latched on the rising edge ...

Page 13

Rev. 1.2/May 01 ID Electronic 6 HY29LV160 13 ...

Page 14

HY29LV160 Notes for Table 6: 1. All values are in hexadecimal. DQ[15:8] are don’t care for unlock and command cycles. 2. All bus cycles are write operations unless otherwise noted. 3. Address is A[10:0] in Word mode and A[10:0, -1] ...

Page 15

N O Issue UNLOCK BYPASS Setup Next Address/Data for N O Issue NORMAL PROGRAM Issue UNLOCK BYPASS Figure 4. ...

Page 16

HY29LV160 even if specified for erasure, is not affected by the sector erase operation. The Sector Erase command sequence starts the Automatic Erase algorithm, which preprograms and verifies the specified unprotected sectors for an all zero data pattern prior to ...

Page 17

Sector Erase command sequence should be reissued once the reset operation is complete. When the Automatic Erase algorithm terminates, the device returns to the array Read mode. Sev- eral methods are provided to allow the host to de- termine ...

Page 18

HY29LV160 The system must write the Reset command to exit the Electronic ID mode and return to reading ar- ray data. Query Command and Common Flash Inter- face (CFI) Mode The HY29LV160 is capable of operating in the Common Flash ...

Page 19

Table 8. CFI Mode: System Interface Data Values ...

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HY29LV160 Table 10. CFI Mode: Vendor-Specific Extended Query Data Values ...

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Table 11. Write and Erase Operation Status Summary ...

Page 22

HY29LV160 START Read DQ[7:0] at Valid Address (Note 1) Read DQ[7:0] at Valid Address (Note DQ[6] Toggled (Note (Note 3) PROGRAM/ERASE Notes: 1. ...

Page 23

For both of these conditions, the host must issue a Reset command to return the device to the Read mode. DQ[3] - Sector Erase Timer After writing a Sector Erase command sequence, the host may read DQ[3] to determine whether ...

Page 24

HY29LV160 ABSOLUTE MAXIMUM RATINGS ...

Page 25

DC CHARACTERISTICS ...

Page 26

HY29LV160 DC CHARACTERISTICS Zero Power Flash 500 Note: Addresses are switching at 1 MHz. Figure 11. I Current vs. Time (Showing Active and Automatic Sleep Currents) CC1 ...

Page 27

KEY TO SWITCHING WAVEFORMS TEST CONDITIONS 6 Figure 13. Test Setup ...

Page 28

HY29LV160 AC CHARACTERISTICS Read Operations ...

Page 29

AC CHARACTERISTICS Hardware Reset (RESET ...

Page 30

HY29LV160 AC CHARACTERISTICS Word/Byte Configuration (BYTE ...

Page 31

AC CHARACTERISTICS Program and Erase Operations ...

Page 32

HY29LV160 AC CHARACTERISTICS Program Command Sequence (last two cycles Addresses 0x555 Data 0xA0 RY/BY# ...

Page 33

AC CHARACTERISTICS Erase Command Sequence (last two cycles Addresses 0x2AA Data 0x55 RY/BY# V ...

Page 34

HY29LV160 AC CHARACTERISTICS t Addresses DQ[7] DQ[6: ...

Page 35

AC CHARACTERISTICS Enter Automatic Erase DQ[6] DQ[2] Notes: 1. The system may use CE# or OE# to toggle DQ[2] and DQ[6]. DQ[2] toggles only when read at an address within an erase-suspended sector. In-System Sector Protect and ...

Page 36

HY29LV160 AC CHARACTERISTICS RESET# IH SA, A[6], Don't Care A[1], A[0] Sector Protect/Unprotect Data 0x60 Note: For Sector Protect, A[ A[1] ...

Page 37

AC CHARACTERISTICS Alternate CE# Controlled Erase/Program Operations ...

Page 38

HY29LV160 AC CHARACTERISTICS 0x555 for Program 0x2AA for Erase Addresses Data 0xA0 for Program ...

Page 39

Latchup Characteristics ...

Page 40

HY29LV160 PACKAGE DRAWINGS Physical Dimensions TSOP48 - 48-pin Thin Small Outline Package (measurements in millimeters) Pin 1.20 MAX 0.25MM (0.0098") BSC 40 48 11.90 12.10 25 18.30 18.50 19.80 20. 0.50 0.70 ...

Page 41

PACKAGE DRAWINGS Physical Dimensions FBGA48 - 48-Ball Fine-Pitch Ball Grid Array (measurements in millimeters) Note: Unless otherwise specified, tolerance = ± 0. 0.20 MIN ...

Page 42

HY29LV160 SECTOR PROTECTION/UNPROTECTION USING PROGRAMMING EQUIPMENT In addition to in-situ sector protection/unprotec- tion, described in the Bus Operations section, the HY29LV160 is capable of performing the same functions using programming equipment. This appendix describes the procedures and provides specifications for ...

Page 43

AC CHARACTERISTICS Sector Protection and Unprotection Using Programming Equipment ...

Page 44

HY29LV160 NOTE: All sectors must be previously protected. See Figure A1 ...

Page 45

AC CHARACTERISTICS A[19:12] A[0] A[1] A[6] t VIDR VIDR Data RESET ...

Page 46

HY29LV160 AC CHARACTERISTICS A[19:12] A[0] A[1] A[6] t VIDR VIDR Data RESET# V ...

Page 47

... The complete part number is formed by appending the Boot Block Location code and the suffix shown in the table to the Device Number. For example, the part number for a 90 ns, Industrial temperature range device in the TSOP package with the top boot block option is HY29LV160TT-90I. Rev. 1.2/May 01 ...

Page 48

... HY29LV160 © 2001 by Hynix Semiconductor America. All rights reserved. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of Hynix Semiconductor Inc. or Hynix Semiconductor America (collec- tively “Hynix”). The information in this document is subject to change without notice ...

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