K4E640411D-JC50 Samsung, K4E640411D-JC50 Datasheet
K4E640411D-JC50
Related parts for K4E640411D-JC50
K4E640411D-JC50 Summary of contents
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... This 16Mx4 EDO Mode DRAM family is fabricated using Samsung s advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES • Part Identification - K4E660411D-JC(5.0V, 8K Ref., SOJ) - K4E640411D-JC(5.0V, 4K Ref., SOJ) - K4E660411D-TC(5.0V, 8K Ref., TSOP) - K4E640411D-TC(5.0V, 4K Ref., TSOP) • Active Power Dissipation Unit : mW Speed 8K 4K -50 ...
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... A0 - A11 Address Inputs(4K Product) DQ0 - 3 Data In/Out V Ground SS RAS Row Address Strobe CAS Column Address Strobe W Read/Write Input OE Data Output Enable V Power(+5.0V) CC N.C No Connection CMOS DRAM • K4E660411D-T • K4E640411D DQ3 3 30 DQ2 CAS ...
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... K4E660411D, K4E640411D ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage Temperature Power Dissipation Short Circuit Output Current * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability ...
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... K4E660411D, K4E640411D DC AND OPERATING CHARACTERISTICS Symbol Power Speed -50 I Don t care CC1 -60 I Normal Don t care CC2 -50 I Don t care CC3 -60 -50 I Don t care CC4 -60 I Normal Don t care CC5 -50 I Don t care CC6 - Operating Current (RAS and CAS, Address cycling @ ...
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... K4E660411D, K4E640411D CAPACITANCE (T = Parameter Input capacitance [A0 ~ A12] Input capacitance [RAS, CAS, W, OE] Output capacitance [DQ0 - DQ3] AC CHARACTERISTICS ( Test condition : V =5.0V 10%, Vih/Vil=2.6/0.7V, Voh/Vol=2.0/0.8V CC Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS Access time from CAS ...
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... K4E660411D, K4E640411D AC CHARACTERISTICS (Continued) Parameter Data hold time Refresh period (4K, Normal) Refresh period (8K, Normal) Write command set-up time CAS to W delay time RAS to W delay time Column address to W delay time CAS set-up time (CAS -before-RAS refresh) CAS hold time (CAS -before-RAS refresh) ...
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... K4E660411D, K4E640411D TEST MODE CYCLE Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS Access time from CAS Access time from column address RAS pulse width CAS pulse width RAS hold time CAS hold time Column Address to RAS lead time ...
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... K4E660411D, K4E640411D NOTES 1. An initial pause of 200us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles before proper device operation is achieved (min) and V (max) are reference levels for measuring timing of input signals. Transition times are measured between (min) and V (max) and are assumed to be 2ns for all inputs ...
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... K4E660411D, K4E640411D READ CYCLE RAS CRP CAS ASR ROW A ADDRESS DQ0 ~ DQ3( RAS t CSH t t RCD RSH t CAS t RAD t RAL t t RAH ASC t CAH COLUMN ADDRESS t RCS ...
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... K4E660411D, K4E640411D WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP CAS ASR ROW A ADDRESS DQ0 ~ DQ3( RAS t CSH t t RCD RSH t CAS t RAD t RAL t t RAH ...
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... K4E660411D, K4E640411D WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP CAS ASR ROW A ADDRESS DQ0 ~ DQ3( RAS t CSH t t RCD RSH t CAS t RAD t RAL t t RAH ...
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... K4E660411D, K4E640411D READ - MODIFY - WRITE CYCLE RAS CRP CAS ASR RAH ROW A ADDR DQ0 ~ DQ3( I/ I/OL t RWC t RAS t t RCD RSH t t RAD t t ASC CAH COLUMN ADDRESS t AWD ...
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... K4E660411D, K4E640411D HYPER PAGE READ CYCLE RAS CRP CAS RAD t t ASR RAH ROW A ADDR DQ0 ~ DQ3( RASP ¡ó t CSH t t HPC HPC RCD t t CAS ...
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... K4E660411D, K4E640411D HYPER PAGE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP CAS ASR RAH ROW A ADDR DQ0 ~ DQ3( RASP ¡ó t HPC t t RCD ...
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... K4E660411D, K4E640411D HYPER PAGE READ-MODIFY-WRITE CYCLE RAS CRP t RCD CAS RAD t RAH t ASR t ASC ROW ADDR DQ0 ~ DQ3( I/ I/OL t RASP t CSH CAS t CAH t ASC COL. ADDR ADDR t RCS t CWL ...
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... K4E660411D, K4E640411D HYPER PAGE READ AND WRITE MIXED CYCLE RAS CAS t RAD RAH t t ASR ROW A ADDR DQ0 ~ DQ3( I/ I/OL t RASP t t READ( ) READ( ) CAC CPA t HPC CAS ...
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... K4E660411D, K4E640411D RAS - ONLY REFRESH CYCLE* NOTE : W, OE Don t care OPEN OUT RAS CRP CAS ASR RAH ROW A ADDR CAS - BEFORE - RAS REFRESH CYCLE NOTE : Don t care RAS RPC t CP ...
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... K4E660411D, K4E640411D HIDDEN REFRESH CYCLE ( READ ) RAS CRP CAS ASR ROW A ADDRESS DQ0 ~ DQ3( Hidden refresh cycle of 64Mb A-dile & B-die, when CAS signal transits from Low to High, the valid data may be cut off. ...
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... K4E660411D, K4E640411D HIDDEN REFRESH CYCLE ( WRITE ) NOTE : D = OPEN OUT RAS CRP CAS ASR ROW A ADDRESS DQ0 ~ DQ3( RAS t t RCD RSH t RAD t RAL t t RAH ASC t CAH ...
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... K4E660411D, K4E640411D CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : OE Don t care RAS RPC CAS DQ0 ~ DQ3(7) CEZ TEST MODE IN CYCLE NOTE : Don t care RAS RPC CAS ...
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... K4E660411D, K4E640411D PACKAGE DIMENSION 32 SOJ 400mil #32 #1 0.841 (21.36) 0.820 (20.84) 0.830 (21.08) 0.0375 (0.95) 0.050 (1.27) 32 TSOP(II) 400mil 0.841 (21.35) 0.821 (20.85) 0.829 (21.05) 0.037 (0.95) 0.050 (1.27) MAX 0.026 (0.66) 0.032 (0.81) 0.015 (0.38) 0.021 (0.53) MAX 0.047 (1.20) MAX 0.002 (0.05) MIN 0.012 (0.30) 0.020 (0.50) CMOS DRAM Units : Inches (millimeters) 0.006 (0.15) 0.012 (0.30) 0.027 (0.69) MIN Units : Inches (millimeters) ...