IXFN24N100_08 IXYS Corporation, IXFN24N100_08 Datasheet - Page 2

• Manufacturer Part Number: IXFN24N100_08
• Manufacturer: IXYS Corporation

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
= 25°C, unless otherwise specified)
Test Conditions
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
Repetitive, pulse width limited by T
I
I
V
F
F
GS
R
DS
GS
G
GS
GS
= 24A, -di/dt = 100A/μs
= 24A, V
= 100V
= 1Ω (External)
= 10V, V
= 0V
= 10V, I
= 10V, V
= 0V, V
GS
D
DS
DS
= 0V, Note 1
DS
= 12A, Note 1
= 0.5 • V
= 25V, f = 1MHz
4,835,592
4,881,106
= 0.5 • V
DSS
4,931,844
5,017,508
5,034,796
DSS
, I
, I
D
D
= 12A
= 12A
5,049,961
5,063,307
5,187,117
(T
JM
J
= 25°C, unless otherwise specified)
5,237,481
5,381,025
5,486,715
Min.
Min.
15
Characteristic Values
Characteristic Values
8700
Typ.
0.05
Typ.
6,162,665
6,259,123 B1
6,306,728 B1
785
315
267
142
1.0
8.0
27
35
35
75
21
52
0.22
Max.
250
1.5
Max.
24
96
6,404,065 B1
6,534,343
6,583,505
°C/W
°C/W
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
ns
A
A
V
S
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
SOT-227B Outline
6,727,585
6,771,478 B2 7,071,537
IXFN24N100
7,005,734 B2
7,063,975 B2
7,157,338B2