VMK90-02T2 IXYS Corporation, VMK90-02T2 Datasheet - Page 2

• Manufacturer Part Number: VMK90-02T2
• Manufacturer: IXYS Corporation

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
d
d
a
Source-Drain Diode
Symbol
I
I
V
t
© 2000 IXYS All rights reserved
IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents:
S
SM
d(on)
r
d(off)
f
rr
fs
A
S
iss
oss
rss
thJC
thJK
SD
g
gs
gd
Test Conditions
V
with heat transfer paste
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
Test Conditions
V
Repetitive; pulse width limited by T
I
Pulse test, t £ 300 ms, duty cycle d £ 2 %
I
F
F
DS
GS
= I
= I
= 0 V
= 10 V; I
V
V
R
V
S
S
; V
, -di/dt = 100 A/ms, V
GS
GS
GS
G
= 1 W (External), resistive load
GS
= 0 V, V
= 10 V, V
= 10 V, V
= 0 V,
D
= 0.5 • I
DS
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
D25
pulsed
DS
= 100 V, V
DSS
DSS
(T
(T
J
, I
, I
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
D
D
JM
= 0.5 • I
= 0.5 • I
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
GS
= 0 V
D25
D25
min.
min.
12.7
9.6
Characteristic Values
Characteristic Values
9000 15000
1600
typ.
typ.
600
380
190
400
1.0
60
70
50
max.
4500
1500
max.
0.33 K/W
0.53 K/W
200
100
450 nC
110 nC
230 nC
330
750
1.2
70
80
83
m/s
mm
mm
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
2
Dimensions in mm (1 mm = 0.0394")
VMK 90-02T2
2 - 4