MG150J1ZS50 TOSHIBA Semiconductor CORPORATION, MG150J1ZS50 Datasheet - Page 2

• Manufacturer Part Number: MG150J1ZS50
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturationvoltage
Input capacitance
Switching time
Reverse current
Forward voltage
Reverse recovery time
Thermal resistance
Note 1: Switching time test circuit & timing chart
Note 2: Silicone grease is applied.
Characteristics
Turn-on delay time
Rise time
Turn-on time
Turn-off delay time
Fall time
Turn-off time
(Ta = 25°C)
V
V
Symbol
R
CE (sat)
t
t
GE (off)
I
I
d (on)
d (off)
C
th (j-c)
GES
CES
t
t
V
I
t
on
off
t
t
ies
R
rr
r
f
F
V
V
I
I
V
Inductive load
V
I
V
R
V
I
I
di / dt = 200A / µs
Transistor stage
Diode stage
C
C
C
F
F
GE
CE
CE
CC
GE
G
R
= 150A, V
= 150A, V
= 15mA, V
= 150A,V
= 150A,
= 600V
2
= 6.2Ω
= 600V, V
= 10V, V
= ±20V, V
= 300V
= ±15V
Test Condition
GE
GE
GE
CE
GE
CE
GE
= 15V
= 0
= −10V
= 5V
= 0, f = 1MHz
= 0
= 0
(Note 1)
Min
5.0
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
MG150J1ZS50
14200
Typ.
2.10
0.15
0.15
0.50
0.20
0.15
0.50
2.30
0.08
7.0
―
―
―
―
―
2001-08-16
±500
Max
2.70
0.30
0.30
1.00
0.40
0.30
1.00
3.00
0.15
0.16
0.35
2.0
8.0
1.0
―
°C / W
Unit
mA
mA
nA
pF
µs
µs
V
V
V