CM200DY-24A MITSUBISHI, CM200DY-24A Datasheet - Page 4

• Manufacturer Part Number: CM200DY-24A
• Description: HIGH POWER SWITCHING USE
• Manufacturer: MITSUBISHI

10
10
10
10
10
10
10
10
10
REVERSE RECOVERY CHARACTERISTICS
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
10
2
1
0
10
2
1
0
10
Conditions:
V
V
R
T
Inductive load
C snubber at bus
1
1
Conditions:
V
V
R
T
Inductive load
C snubber at bus
1
j
CC
GE
j
G
CC
GE
G
= 125 C
= 125 C
COLLECTOR CURRENT I
= 1.6
= 1.6
= 600V
= 15V
2
2
= 600V
= 15V
2
EMITTER CURRENT I
EMITTER CURRENT I
OF FREE-WHEEL DIODE
COLLECTOR CURRENT
RECOVERY LOSS vs. I
SWITCHING LOSS vs.
3
3
3
5 7
5 7
5 7
(TYPICAL)
(TYPICAL)
(TYPICAL)
10
10
10
2
2
2
Conditions:
V
V
R
T
Inductive load
2
2
2
j
Esw(off)
Esw(on)
CC
GE
Err
I
t
G
rr
rr
= 25 C
3
3
3
= 1.6
E
E
= 600V
= 15V
(A)
(A)
C
E
(A)
5 7
5 7
5 7
10
10
10
3
3
3
10
10
10
10
10
10
10
10
10
10
–1
–2
–3
7
5
3
2
7
5
3
2
7
5
3
2
0
2
7
5
3
2
1
7
5
3
2
10
2
7
5
3
2
1
7
5
3
2
10
0
0
10
–3
IGBT part:
Per unit base =
R
FWDi part:
Per unit base =
R
0
0
IMPEDANCE CHARACTERISTICS
th(j–c)
th(j–c)
2 3 5 7
GATE RESISTANCE R
2
GATE RESISTANCE R
2
= 0.093 C/W
= 0.17 C/W
(IGBT part & FWDi part)
SWITCHING LOSS vs.
TRANSIENT THERMAL
RECOVERY LOSS vs.
10
GATE RESISTANCE
GATE RESISTANCE
3
3
HIGH POWER SWITCHING USE
–2
2 3 5 7
MITSUBISHI IGBT MODULES
5 7
5 7
(TYPICAL)
(TYPICAL)
TIME (s)
10
10
10
10
1
1
–1
–5
CM200DY-24A
Conditions:
V
V
I
T
Inductive load
C snubber at bus
Conditions:
V
V
I
T
Inductive load
C snubber at bus
2 3 5 7
2 3 5 7
C
E
j
CC
GE
j
CC
GE
Single Pulse
T
Under the chip
= 125 C
= 200A
= 125 C
= 200A
Esw(on)
Esw(off)
Err
2
2
C’
= 600V
= 15V
= 600V
= 15V
= 25 C
10
10
3
3
G
G
0
–4
( )
( )
2 3 5 7
2 3 5 7
5 7
5 7
10
10
10
10
10
10
10
7
5
3
2
7
5
3
2
2
2
1
–3
Mar. 2004
–1
–2
–3