CM75TU-12F MITSUBISHI, CM75TU-12F Datasheet
CM75TU-12F
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CM75TU-12F Summary of contents
Page 1
... 19.1 11 GuP EuP GvP EvP GwP G E EwP 5–M4NUTS 11 19.1 Tc measured point 2.8 LABEL CM75TU-12F HIGH POWER SWITCHING USE ¡I C ..................................................................... ¡V CES ............................................................ ¡Insulated Type ¡6-elements in a pack 102 4– 5.5 0.25 MOUNTING HOLES GuN 19.1 11 11.85 EuN GvN EvN ...
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... E GE IGBT part (1/6 module) FWDi part (1/6 module) *2 Case to fin, Thermal compoundapplied (1/6 module) Tc measured point is just under the chips ) does not exceed T j MITSUBISHI IGBT MODULES CM75TU-12F HIGH POWER SWITCHING USE Ratings Unit 600 20 75 150 (Note 2) 75 (Note 2) 150 290 – ...
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... 30A ( ies C oes C res (V) CE MITSUBISHI IGBT MODULES CM75TU-12F HIGH POWER SWITCHING USE COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL 15V GE 2 125 100 COLLECTOR CURRENT I (A) C ...
Page 4
... FWDi part: 2 Per unit base = – – Single Pulse – 700 CM75TU-12F – 0.43 C/W th(j–c) = 0.9 C/W th(j– – – –3 –5 – ...