MG600J2YS61A MITSUBISHI, MG600J2YS61A Datasheet

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MG600J2YS61A

Manufacturer Part Number
MG600J2YS61A
Description
High Power Switching Applications Motor Control Applications
Manufacturer
MITSUBISHI
Datasheet

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Part Number:
MG600J2YS61A
Manufacturer:
MSC
Quantity:
452
High Power Switching Applications
Motor Control Applications
Equivalent Circuit
(short circuit and over temperature)
Integrates a complete half bridge power circuit and fault-signal output circuit in one package.
The electrodes are isolated from case.
Low thermal resistance
V
CE (sat)
MG600J2YS61A (600V/600A 2in1)
5
6
7
4
1
2
3
= 2.2 V (typ.)
Signal terminal
1.
5.
OT
G (H)
G (L)
F
F
O
O
2.
6.
C1
E2
F
F
O
O
(H)
(L)
MITSUBISHI IGBT Module
3.
7.
E1/C2
E (H)
E (L)
4.
8.
Open
V
D
MG600J2YS61A
2004-10-01 1/13

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MG600J2YS61A Summary of contents

Page 1

... MG600J2YS61A (600V/600A 2in1) High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) • The electrodes are isolated from case. • Low thermal resistance • 2.2 V (typ.) ...

Page 2

... Package Dimensions (H) Signal Terminal Layout 2.54 Weight: 375 ( ( ( (H) 8. Open ( ( ( ( ( (H) O MG600J2YS61A Open 2004-10-01 2/13 ...

Page 3

... (Note 600 Symbol Test Condition = ⎯ 300 ± (Fo MG600J2YS61A Unit °C °C °C V N・m Min Typ. Max Unit ⎯ ⎯ +3/−4 mA ⎯ ⎯ 100 nA ⎯ ...

Page 4

... Symbol Test Condition Inverter IGBT stage R th (j-c) Inverter FRD stage R With silicon compound th (c- 90 90% 10 (off) f MG600J2YS61A Min Typ. Max Unit ⎯ ⎯ 0.045 °C/W ⎯ ⎯ 0.068 ⎯ ⎯ 0.013 °C/W 2004-10-01 4/13 ...

Page 5

... Max CE (sat) 20 1.8 2.0 22 1.9 2.2 24 2.1 2.4 26 2.3 2 Min Max F D 1.9 2.2 E 2.1 2.4 F 2.3 2.6 may not be output even under error conditions. O Min Typ. Max ⎯ V 300 375 ⎯ ⎯ R 5.1 G ⎯ ⎯ MG600J2YS61A Unit V V Ω kHz and VF among IGBT in CE (sat) 2004-10-01 5/13 ...

Page 6

... Collector-emitter voltage V I – 600 Common emitter = 125° 500 400 300 200 100 Collector-emitter voltage V MG600J2YS61A ( (V) CE 2004-10-01 6/13 ...

Page 7

... Gate-emitter voltage V V – Common emitter = 40° Gate-emitter voltage V MG600J2YS61A GE 600 A = 900 300 ( 600 A = 900 300 ( 600 A = 900 300 (V) ...

Page 8

... Gate-emitter voltage 600 Common cathode = 500 400 300 125°C 200 100 0 0 0.5 1 Forward voltage V MG600J2YS61A – 125° −40 C 25° (V) GE – −40°C = 25° 1.5 2 2.5 3 (V) F 2004-10-01 8/13 ...

Page 9

... Common emitter = 300 5.1 Ω = 25° 3000 = ± 125° 1000 300 100 100 200 300 Collector current I MG600J2YS61A G t off (on (off (Ω off (on (off) ...

Page 10

... E on 100 Common emitter = 300 5.1 Ω = 25° ± 125° 100 200 300 Collector current I MG600J2YS61A – R off off (Ω) G – I off C E off E on 400 500 600 700 (A) C 2004-10-01 10/13 ...

Page 11

... 300 100 100 200 Forward current I Edsw – I 10.00 3.00 1.00 0.30 0.10 0 100 200 300 Forward current I MG600J2YS61A – 300 400 500 600 ( Common emitter = 300 5.1 Ω = 25° ± 125° ...

Page 12

... V CE 100 0 0 1000 2000 Charge Q 1000000 300000 100000 30000 10000 3000 1000 = 0 V 300 MHz Tc = 25°C 100 0.01 0.1 Collector-emitter voltage V MG600J2YS61A , V – 3000 4000 5000 6000 (nC – ies C oes C res 1 10 (V) CE 2004-10-01 12/13 20 ...

Page 13

... 5.1Ω ± 100 200 300 Collector-emitter voltage 25°C 0.1 0.01 0.001 0.001 0.01 Pulse width t MG600J2YS61A 400 500 600 700 (V) CE – Diode stage Transistor stage 0 (s) w 2004-10-01 13/13 ...

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