BSM300GA120DN2E3166 Infineon Technologies AG, BSM300GA120DN2E3166 Datasheet - Page 7

• Manufacturer Part Number: BSM300GA120DN2E3166
• Description: 1200V/430A IGBT power module
• Manufacturer: Infineon Technologies AG

Typ. switching time
I = f (I
Typ. switching losses
E = f (I
Semiconductor Group
par.: V
par.: V
E
t
mWs
10
10
10
10
140
100
C
ns
80
60
40
20
C
) , inductive load , T
CE
CE
0
4
3
2
1
) , inductive load , T
0
0
= 600 V, V
= 600 V, V
100
100
200
200
GE
GE
300
300
= ± 15 V, R
= ± 15 V, R
j
= 125°C
j
400
400
= 125°C
500
500
G
G
= 3.3
= 3.3
A
A
I
I
tr
tdon
C
C
tdoff
tf
Eon
Eoff
700
700
7
Typ. switching time
t = f (R
Typ. switching losses
E = f (R
par.: V
par.: V
E
t
mWs
10
10
10
10
140
100
ns
80
60
40
20
G
CE
CE
0
4
3
2
1
G
0
0
) , inductive load , T
) , inductive load , T
= 600 V, V
= 600V, V
5
5
BSM300GA120DN2E3166
10
10
GE
GE
15
15
= ± 15 V, I
= ± 15 V, I
20
20
j
j
= 125°C
= 125°C
25
25
C
C
30
= 300 A
30
= 300 A
Eon
Mar-29-1996
tdoff
tdon
tr
tf
Eoff
R
R
G
G
40
40