SK60GB125 Semikron International, SK60GB125 Datasheet
SK60GB125
Related parts for SK60GB125
SK60GB125 Summary of contents
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... SK60GB125 ® SEMITOP 3 IGBT Module SK60GB125 Preliminary Data Features Typical Applications GB 1 Absolute Maximum Ratings Symbol Conditions IGBT Inverse Diode Module Characteristics Symbol Conditions IGBT 12-05-2008 DIL Values Units min. typ. max. Units © by SEMIKRON ...
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... SK60GB125 ® SEMITOP 3 IGBT Module SK60GB125 Preliminary Data Features Typical Applications GB 2 Characteristics Symbol Conditions Inverse Diode This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability ...
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... SK60GB125 Fig. 1 Typ. output characteristic, inclusive R Fig. 3 Typ. turn-on /-off energy = CC'+ EE' Fig. 4 Typ. turn-on /-off energy = f (R Fig. 6 Typ. gate charge characteristic 12-05-2008 DIL ) G © by SEMIKRON ...
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... SK60GB125 Fig. 7 Typ. switching times vs Fig. 8 Typ. switching times vs. gate resistor R Fig. 10 CAL diode forward characteristic 12-05-2008 DIL G © by SEMIKRON ...
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... SK60GB125 UL recognized file 5 12-05-2008 DIL no 532 © by SEMIKRON ...