MJ10023 ON Semiconductor, MJ10023 Datasheet - Page 6

• Manufacturer Part Number: MJ10023
• Manufacturer: ON Semiconductor

MJ10023
The Safe Operating Area figures shown in Figures 13 and 14 are
specified for these devices under the test conditions shown.
6
0.05
0.02
0.01
100
5.0
2.0
1.0
0.5
0.2
0.1
50
20
10
80
70
60
50
40
30
20
10
0
1.0
0
Figure 14. Maximum RBSOA, Reverse Bias
V CEM , PEAK COLLECTOR–EMITTER VOLTAGE (VOLTS)
2.0
Figure 13. Maximum Forward Bias Safe
100
V CE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
BONDING WIRE LTD
THERMAL LTD
SECOND BREAKDOWN LTD
5.0
200
R BE = 24 Ω
T C = 25 C
Safe Operating Area
10
Operating Area
300
20
(TURN–ON SWITCHING)
TURN–OFF LOAD LINE
dc
I C /I B 20
25 C T J 100 C
400
50
100
2 V V BE(off)
10 µs
80
60
40
20
0
500
0
100
600
200 400
40
8 V
700
Figure 15. Power Derating
T C , CASE TEMPERATURE ( C)
80
DERATING
THERMAL
FORWARD BIAS
transistor: average junction temperature and second break-
down. Safe operating area curves indicate I C – V CE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when T C
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 13 may be found at any case tem-
perature by using the appropriate curve on Figure 15.
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
REVERSE BIAS
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current condition allowable dur-
ing reverse biased turn–off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 14 gives the RBSOA character-
istics.
There are two limitations on the power handling ability of a
The data of Figure 13 is based on T C = 25 _ C; T J(pk) is
T J(pk) may be calculated from the data in Figure 12. At
For inductive loads, high voltage and high current must be
SECOND BREAKDOWN
120
SAFE OPERATING AREA INFORMATION
DERATING
Motorola Bipolar Power Transistor Device Data
25 C. Second breakdown limitations do not der-
160
200