MG600Q1US61 TOSHIBA Semiconductor CORPORATION, MG600Q1US61 Datasheet - Page 5

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MG600Q1US61

Manufacturer Part Number
MG600Q1US61
Description
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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MG600Q1US61
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1000
10000
100
1000
600
500
400
300
200
100
100
10
0
0
0
0
V CC = 600 V, I C = 600 A
V GE = ±15 V
Common cathode
V GE = 0
t d (off)
t r
t r
100
0.5
5
: T j = 25°C
: T j = 125°C
t off
t f
t d (on)
Gate resistance R
Forward voltage V
Collector current I
Switching time – R
t on
Switching time – I
200
125
1
10
t on
I
-40
F
300
– V
1.5
V CC = 600 V, R G = 2 W
V GE = ±15 V, Ls = 100 nH
F
15
G
C
F
400
2
C
G
(V)
(9)
(A)
t off
T j = 25°C
20
: T j = 25°C
: T j = 125°C
t d (on)
500
2.5
t d (off)
t f
25
600
3
5
1000
1000
1000
800
600
400
200
100
100
10
10
0
1
0
0
0
Common emitter
R L = 1 W
T j = 25°C
100
600
1000
5
200
Gate resistance R
E off
Collector current I
Switching loss – R
Switching loss – I
400
200
V CE = 0 V
Charge Q
V
E on
2000
CE
10
, V
300
E on
GE
V CC = 600 V, R G = 2 W
V GE = ±15 V, Ls = 100 nH
G
3000
– Q
15
E off
(nC)
V CC = 600 V
I C = 600 A
V GE = ±15 V
G
C
MG600Q1US61
400
G
C
G
(A)
(9)
: T j = 25°C
: T j = 125°C
4000
20
: T j = 25°C
: T j = 125°C
500
2002-10-04
5000
600
25
20
16
12
8
4
0

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