SKM150GB12T4G Semikron International, SKM150GB12T4G Datasheet
SKM150GB12T4G
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SKM150GB12T4G Summary of contents
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SKM 150GB12T4G ® SEMITRANS 3 IGBT4 Modules SKM 150GB12T4G Target Data Features Typical Applications Remarks GB 1 Absolute Maximum Ratings Symbol Conditions IGBT Inverse Diode Module Characteristics Symbol Conditions IGBT 03-06-2008 LAN Values Units min. typ. max. Units © by ...
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SKM 150GB12T4G ® SEMITRANS 3 IGBT4 Modules SKM 150GB12T4G Target Data Features Typical Applications Remarks GB 2 Characteristics Symbol Conditions Inverse Diode Freewheeling Diode Module This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This ...
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SKM 150GB12T4G Fig. 1 Typ. output characteristic, inclusive R Fig. 5 Typ. transfer characteristic 3 Fig. 2 Rated current vs. temperature I CC'+ EE' Fig. 6 Typ. gate charge characteristic 03-06-2008 LAN = © by ...
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SKM 150GB12T4G Fig. 9 Transient thermal impedance of IGBT and Diode 4 Fig. 10 CAL diode forward characteristic 03-06-2008 LAN © by SEMIKRON ...
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SKM 150GB12T4G UL recognized file 5 03-06-2008 LAN no 532 © by SEMIKRON ...