IXFN60N80P IXYS Corporation, IXFN60N80P Datasheet
IXFN60N80P
Manufacturer Part Number
IXFN60N80P
Description
Manufacturer
IXYS Corporation
Datasheet
1.IXFN60N80P.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN60N80P
Manufacturer:
PANASONIC
Quantity:
6 000
Part Number:
IXFN60N80P
Quantity:
116
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
M
Weight
GSS
DSS
D25
DM
AR
GS(th)
J
JM
stg
L
DS(on)
© 2006 IXYS All rights reserved
DSS
DGR
GSS
GSM
AR
AS
D
ISOL
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
V
V
V
V
V
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
V
S
ISOL
GS
DS
GS
DS
GS
J
J
C
C
C
C
C
J
C
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
≤ 1 mA
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
DC
D
= 3 mA
= 8 mA
, V
= I
G
= 2 Ω
DS
T
, Note 1
= 0
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
t = 1 s
t = 1 min
DSS
IXFN 60N80P
JM
,
800
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.5 / 13 Nm/lb.in.
1.5 / 13 Nm/lb.in.
1040
2500
3000
800
800
±30
±40
250
100
150
300
53
30
20
30
5
±200
3000
140
Max.
5.0
25
V/ns
m Ω
mJ
nA
µA
µA
V~
V~
°C
°C
°C
°C
W
g
V
V
V
V
V
V
A
A
A
J
V
I
R
t
miniBLOC, SOT-227 B (IXFN)
G = Gate
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
•
•
•
l
l
l
Advantages
l
l
l
D25
rr
International standard package
Encapsulating epoxy meets
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
DS(on)
DSS
E153432
G
≤ ≤ ≤ ≤ ≤ 140 mΩ Ω Ω Ω Ω
= 800
=
≤ ≤ ≤ ≤ ≤ 250 ns
S
D = Drain
53
D
DS99562E(02/06)
V
A
S
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IXFN60N80P Summary of contents
Page 1
PolarHV HiPerFET TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions 25° 150° C DSS 25° 150° DGR J V Continuous GSS ...
Page 2
Symbol Test Conditions Note iss MHz oss rss t d(on) ...
Page 3
Fig. 1. Output Characteristics @ 25º Volts DS Fig. 3. Output Characteristics @ 125º ...
Page 4
Fig. 7. Input Admittance 125ºC J 25º 40º 4.25 4.5 4.75 5 5.25 5 Volts GS Fig. 9. Forward Voltage Drop of Intrinsic Diode 180 ...