PTB20017 Ericsson Microelectronics, PTB20017 Datasheet
PTB20017
Manufacturer Part Number
PTB20017
Description
Manufacturer
Ericsson Microelectronics
Datasheet
1.PTB20017.pdf
(3 pages)
Description
The 20017 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation across the 860 to 900 MHz cellular
radio frequency band. Rated at 150 watts minimum output power, it
may be used for both CW and PEP applications. Ion implantation,
nitride surface passivation and gold metallization are used to ensure
excellent device reliability. 100% lot traceability is standard.
Maximum Ratings
9/28/98
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at T flange = 25°C
Storage Temperature Range
Thermal Resistance (T flange = 70°C)
Above 25°C derate by
240
200
160
120
80
40
0
Typical Output Power vs. Input Power
0
7
Input Power (Watts)
14
Cellular Radio RF Power Transistor
V
I
f = 900 MHz
CQ
CC
= 200 mA (per side)
= 25 V
21
28
35
1
150 Watts, 860–900 MHz
150 Watts, 860–900 MHz
Class AB Characteristics
50% Collector Efficiency at 150 Watts
Gold Metallization
Silicon Nitride Passivated
Symbol
V
V
V
T
R
P
CER
CBO
EBO
STG
I
C
D
JC
Package 20224
–40 to +150
Value
PTB 20017
1.89
0.53
330
4.0
40
60
25
Watts
Unit
W/°C
°C/W
Vdc
Vdc
Vdc
Adc
°C
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PTB20017 Summary of contents
Page 1
Cellular Radio RF Power Transistor Description The 20017 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz cellular radio frequency band. Rated at 150 watts minimum output power, ...
Page 2
PTB 20017 Electrical Characteristics Characteristic Conditions Breakdown Voltage Breakdown Voltage Breakdown Voltage Current Gain V CE ...
Page 3
Typical Performance Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 Gain & Efficiency vs. Frequency (as measured in a broadband circuit) 11 Gain (dB Efficiency (%) ...