PTB20038 Ericsson Microelectronics, PTB20038 Datasheet

PTB20038

Manufacturer Part Number

PTB20038

Description

Manufacturer

Ericsson Microelectronics

Datasheet

1.PTB20038.pdf (2 pages)

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Description

The 20038 is a class AB, NPN, common emitter RF power transistor

intended for 25 Vdc operation across the 860 to 900 MHz frequency

band. Rated at 25 watts minimum output power, it may be used for

both CW and PEP applications. It is specifically designed for high

efficiency operation at average power levels around 10 watts with

high PEP capacity. Ion implantation, nitride surface passivation and

gold metallization are used to ensure excellent device reliability. 100%

lot traceability is standard.

Maximum Ratings

9/28/98

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage (collector open)

Collector Current (continuous)

Total Device Dissipation at T flange = 25°C

Storage Temperature Range

Thermal Resistance (T flange = 70°C)

Above 25°C derate by

Typical Output Power vs. Input Power

Input Power (Watts)

Cellular Radio RF Power Transistor

f = 900 MHz

= 100 mA

= 25 V

25 Watts, 860–900 MHz

Class AB Characteristics

Gold Metallization

Silicon Nitride Passivated

Symbol

CER

CBO

EBO

STG

Package 20200

–40 to +150

Value

PTB 20038

0.37

4.0

6.7

2.7

Watts

Unit

W/°C

°C/W

Vdc

Adc

°C

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PTB20038 Summary of contents

Page 1

Cellular Radio RF Power Transistor Description The 20038 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 25 watts minimum output power, it may ...

Page 2

PTB 20038 Electrical Characteristics Characteristic Conditions Breakdown Voltage Breakdown Voltage Breakdown Voltage Current Gain V CE ...

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