APT5010JLLU3 Advanced Power Technology, APT5010JLLU3 Datasheet - Page 2

• Manufacturer Part Number: APT5010JLLU3
• Manufacturer: Advanced Power Technology

DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
APT Reserves the right to change, without notice, the specifications and information contained herein.
1 Repetitive Rating: Pulse width limited by maximum junction
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
Symbol
Symbol
Symbol
temperature
t
R
R
C
t
C
C
dv
Q
Q
V
Q
d(on)
d(off)
I
Q
t
SM
I
oss
t
t
SD
iss
rss
S
/
gs
gd
r
rr
f
JC
JA
g
rr
dt
0.30
0.25
0.20
0.15
0.10
0.05
0
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time (I
Reverse Recovery Charge (I
Peak Diode Recovery
Characteristic
Junction to Case
Junction to Ambient
10
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.05
0.9
0.5
0.1
0.7
0.3
3
10
-4
dv
2
1
/
dt
(V
S
(Body Diode)
5
= -I
GS
S
= -I
= 0V, I
D
44A
RECTANGULAR PULSE DURATION (SECONDS)
D
44A
, dl
S
, dl
S
= -I
10
/dt = 100A/µs)
SINGLE PULSE
S
-3
D
/dt = 100A/µs)
44A
)
4 Starting T
5
.
Test Conditions
I
I
D
D
dv
device itself.
= 44A @ 25°C
= 44A @ 25°C
V
V
/
V
V
R
V
dt
f = 1 MHz
V
DD
DD
GS
GS
DS
G
GS
numbers reflect the limitations of the test circuit rather than the
= 0.6
= 250V
= 250V
= 25V
= 10V
= 15V
= 0V
10
j
= +25°C, L = 1.65mH, R
-2
I
S
-
I
D
44A
Note:
di
Peak T J = P DM x Z JC + T C
/
dt
MIN
MIN
MIN
Duty Factor D = t 1 / t
10
700A/µs
-1
t 1
G
= 25 , Peak I
t 2
10.86
4360
TYP
TYP
TYP
608
894
60
96
24
49
11
15
25
3
V
R
2
V
DSS
APT5010JLLU3
MAX
MAX
MAX
0.28
176
L
1.3
40
44
8
1.0
= 44A
T
J
150
Amps
UNIT
UNIT
Volts
UNIT
°C/W
V/ns
nC
µC
pF
ns
ns
°
C