30N60AU1 IXYS Corporation, 30N60AU1 Datasheet

30N60AU1

Manufacturer Part Number

30N60AU1

Description

Manufacturer

IXYS Corporation

Datasheet

1.30N60AU1.pdf (6 pages)

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Low V

High Speed IGBT with Diode

Combi Packs

Short Circuit SOA Capability

Symbol

SSOA

(RBSOA)

(SCSOA)

Weight

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

Symbol

IXYS reserves the right to change limits, test conditions, and dimensions.

C25

C90

CES

GES

stg

CGR

CES

GES

GEM

GE(th)

CE(sat)

CES

CE(sat)

Test Conditions

Continuous

Transient

Clamped inductive load, L = 100 mH

Mounting torque

Test Conditions

= 33 W, non repetitive

= 25°C to 150°C

= 25°C to 150°C; R

= 25°C

= 90°C

= 25°C, 1 ms

= 15 V, T

= 15 V, V

= 25°C

IGBT with Diode

= 750 mA, V

= 2.5 mA, V

= 0.8 • V

= 0 V

= 0 V, V

= I

C90

, V

CES

= 125°C, R

= 15 V

= 360 V, T

= ±20 V

= 0 V

= V

= 1 MW

= 33 W

= 125°C

30N60U1

30N60AU1

= 25°C

= 125°C

= 25°C, unless otherwise specified)

IXSH 30 N60U1

IXSH 30 N60AU1

min.

600

Characteristic Values

-55 ... +150

@ 0.8 V

Maximum Ratings

typ.

1.13/10 Nm/lb.in.

= 60

600

±20

±30

100

200

150

300

CES

max.

±100

500

2.5

3.0

°C

TO-247 AD

G = Gate,

E = Emitter,

Features

• International standard package

• High frequency IGBT with guaranteed

• IGBT and anti-parallel FRED in one

• 2nd generation HDMOS

• Low V

• MOS Gate turn-on

Applications

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Uninterruptible power supplies (UPS)

• Switch-mode and resonant-mode

Advantages

• Space savings (two devices in one

• Easy to mount with 1 screw

• Reduces assembly time and cost

• High power density

JEDEC TO-247 AD

Short Circuit SOA capability

package

- for low on-state conduction losses

- drive simplicity

package)

power supplies

(isolated mounting screw hole)

600 V

CES

CE(sat)

C = Collector,

TAB = Collector

50 A

C25

92714F (12/96)

process

2.5 V

3.0 V

CE(sat)

1 - 6

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30N60AU1 Summary of contents

Page 1

... Nm/lb.in. 6 300 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. 600 25° 125°C J 30N60U1 30N60AU1 V I CES C25 600 600 TO-247 Gate Collector Emitter, TAB = Collector ...

Page 2

... 25° IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXSH 30N60U1 IXSH 30N60AU1 TO-247 AD (IXSH) Outline max 150 Dim. Millimeter Min. Max. ...

Page 3

... IXYS All rights reserved V = 15V GE 13V 11V 60A 30A 15A 40°C IXSH 30N60U1 IXSH 30N60AU1 Fig.2 Output Characterstics 100 T = 25° Volts CE Fig.4 Temperature Dependence of Output Saturation Voltage 1 ...

Page 4

... Pulse Width - Seconds IXSH 30N60U1 IXSH 30N60AU1 Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time 125° 30A C E (-A), hi-speed off t (-A), hi-speed Ohms G Fig ...

Page 5

... 200 di /dt - A/µs F © 2000 IXYS All rights reserved = 25°C 2.0 2.5 120 160 I = 30A F max. 400 600 IXSH 30N60U1 IXSH 30N60AU1 Fig.13 Peak Forward Voltage V Forward Recovery Time 125° 37A 100 200 300 400 di /dt - A/µ ...

Page 6

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