MG150Q2YL1 TOSHIBA Semiconductor CORPORATION, MG150Q2YL1 Datasheet - Page 2

• Manufacturer Part Number: MG150Q2YL1
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Switching time
Forward voltage
Reverse recovery time
Thermal resistance
Switching loss
Note: Switching time measurement circuit and input/output waveforms
-V
Characteristic
GE
Turn-on delay time
Rise time
Turn-on time
Turn-off delay time
Fall time
Turn-off time
Turn-on
Turn-off
R
R
G
G
I
C
(Ta = = = = 25°C)
I
L
F
V
V
V
CE
Symbol
GE (OFF)
R
CE (sat)
t
t
I
I
d (on)
d (off)
C
th (j-c)
E
E
GES
CES
t
t
V
t
on
off
t
t
ies
rr
on
off
r
f
F
V
CC
V
V
V
I
V
V
Inductive load
V
V
I
I
di/dt = 700 A/ms
Transistor stage
Diode stage
Inductive load
V
V
Tc = 125°C
C
F
F
GE
CE
CE
GE
CE
CC
GE
CC
GE
= 150 A, V
= 150 A, V
= 150 A,
2
= 1200 V, V
= 5 V, I
= 10 V, V
= ±20 V, V
= 15 V
= 600 V, I
= ±15 V, R
= 600 V, I
= ±15 V, R
V
GE
I
0
C
0
Test Condition
C
GE
GE
t
= 150 mA
GE
d (off)
C
C
CE
G
G
= 0
= -10 V,
GE
= 150A
= 150 A
= 0, f = 1 MHz
= 5.6 W
= 5.6 W
= 0
= 0
90%
t
Tc = 25°C
Tc = 125°C
off
t
90%
f
10%
Min
4.0
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
MG150Q2YS65H
t
10%
d (on)
12800
Typ.
0.05
0.05
0.10
0.55
0.05
0.60
3.0
3.6
2.4
0.1
15
12
¾
¾
¾
¾
¾
10%
t
on
2002-10-04
±500
Max
0.15
0.14
0.28
2.0
7.0
4.0
3.5
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
90%
t
r
t
rr
°C/W
Unit
mA
mJ
nA
pF
ms
ms
V
V
V