HMC553 Hittite Microwave Corporation, HMC553 Datasheet

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HMC553

Manufacturer Part Number
HMC553
Description
Manufacturer
Hittite Microwave Corporation
Datasheet

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4 - 60
4
Typical Applications
The HMC553 is ideal for:
• Microwave Radio
• Military & Space
• Communications, Radar & EW
Functional Diagram
Electrical Specifi cations,
Frequency Range, RF & LO
Frequency Range, IF
Conversion Loss
Noise Figure (SSB)
LO to RF Isolation
LO to IF Isolation
RF to IF Isolation
IP3 (Input)
IP2 (Input)
1 dB Gain Compression (Input)
*Unless otherwise noted, all measurements performed as downconverter, IF= 100 MHz.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Parameter
T
A
v02.1007
= +25° C, IF= 100 MHz, LO= +13 dBm*
Order On-line at www.hittite.com
Min.
40
28
15
DC - 5
7 - 11
Typ.
48
33
22
18
48
10
7
7
Features
High LO/RF Isolation: 48 dB
Passive Double Balanced Topology
Low Conversion Loss: 7 dB
Wide IF Bandwidth: DC - 5 GHz
Robust 1,000V ESD, Class 1C
Small Size: 0.83 x 1.12 x 0.1 mm
General Description
The HMC553 is a passive double balanced mixer
that can be used as an upconverter or downconverter
between 7 and 14 GHz. The miniature monolithic
mixer is fabricated in a GaAs MESFET process, and
requires no external components or matching circu-
itry. The HMC553 operates with LO drive levels as
low as +9 dBm and provides excellent LO to RF and
LO to IF isolation due to optimized balun structures.
Measurements were made with the chip mounted
into in a 50 ohm test fi xture and includes the para-
sitic effects of wire bond assembly. Connections were
made with a 1 mil wire bond with minimal length (<12
mil).
Max.
9.5
9.5
GaAs MMIC FUNDAMENTAL
Min.
35
30
25
MIXER, 7 - 14 GHz
11 - 14
DC - 5
Typ.
11.5
45
35
28
22
48
8
8
HMC553
Max.
10
10
Units
GHz
GHz
dBm
dBm
dBm
dB
dB
dB
dB
dB

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HMC553 Summary of contents

Page 1

... GHz. The miniature monolithic mixer is fabricated in a GaAs MESFET process, and requires no external components or matching circu- itry. The HMC553 operates with LO drive levels as low as +9 dBm and provides excellent and isolation due to optimized balun structures. Measurements were made with the chip mounted into ohm test fi xture and includes the para- sitic effects of wire bond assembly ...

Page 2

... Return Loss @ LO = +13 dBm 0 -5 -10 -15 -20 - Upconverter Performance Conversion Gain vs. LO Drive 0 -5 -10 -15 - Order On-line at www.hittite.com HMC553 MIXER GHz RF/IF LO/RF LO/ FREQUENCY (GHz FREQUENCY (GHz) +9 dBm +11 dBm +13 dBm ...

Page 3

... RF = 10.1 GHz @ -10 dBm -40C GHz @ +13 dBm All values in dBc below the IF output power level Order On-line at www.hittite.com HMC553 GaAs MMIC FUNDAMENTAL MIXER GHz +25C +85C -40C FREQUENCY (GHz) +25C +85C -40C ...

Page 4

... BACKSIDE METAL IS GROUND. 8. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 9. THIS DIE IS DESIGNED FOR PICK-UP WITH VACUUM (EDGE) COLLET TOOLS. TO PRECLUDE THE RISK OF PERMANENT DAMAGE, NO CONTACT TO THE DIE SURFACE IS ALLOWED WITHIN THIS RECTANGULAR AREA. Order On-line at www.hittite.com HMC553 MIXER GHz ...

Page 5

... IF frequency range. For operation to DC, this pin must not source or sink more than current or part non-function and possible part failure will result. The backside of the die must be connected to RF ground. Order On-line at www.hittite.com HMC553 MIXER GHz Interface Schematic ...

Page 6

... Thick GaAs MMIC 0.076mm (0.003”) 0.150mm (0.005”) Thick Moly Tab Order On-line at www.hittite.com HMC553 MIXER GHz 3 mil Ribbon Bond 4 RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. 3 mil Ribbon Bond RF Ground Plane 0.254mm (0.010” ...

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