SAM3N0A Atmel Corporation, SAM3N0A Datasheet - Page 282

• Manufacturer Part Number: SAM3N0A
• Manufacturer: Atmel Corporation

Figure 18-6. Example of Partial Page Programming
18.3.3.3
18.3.3.4
282
X words
X words
X words
X words
SAM3N
Erase Commands
Lock Bit Protection
So Page Y erased
Erase All Flash
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32-bit wide
Step 1.
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Two errors can be detected in the EEFC_FSR register after a programming sequence:
By using the WP command, a page can be programmed in several steps if it has been erased
before (see
The Partial Programming mode works only with 128-bit (or higher) boundaries. It cannot be used
with boundaries lower than 128 bits (8, 16 or 32-bit for example).
Erase commands are allowed only on unlocked regions.
The erase sequence is:
Two errors can be detected in the EEFC_FSR register after a programming sequence:
Lock bits are associated with several pages in the embedded Flash memory plane. This defines
lock regions in the embedded Flash memory plane. They prevent writing/erasing protected
pages.
• a Command Error: a bad keyword has been written in the EEFC_FCR register.
• a Lock Error: the page to be programmed belongs to a locked region. A command must be
• Erase starts as soon as one of the erase commands and the FARG field are written in the
• When the programming completes, the FRDY bit in the Flash Programming Status Register
• a Command Error: a bad keyword has been written in the EEFC_FCR register.
• a Lock Error: at least one page to be erased belongs to a locked region. The erase command
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previously run to unlock the corresponding region.
Flash Command Register.
(EEFC_FSR) rises. If an interrupt has been enabled by setting the FRDY bit in EEFC_FMR,
the interrupt line of the NVIC is activated.
has been refused, no page has been erased. A command must be run previously to unlock
the corresponding region.
Figure
Programming of the second part of Page Y
18-6).
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32-bit wide
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Step 2.
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Programming of the third part of Page Y
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32-bit wide
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Step 3.
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11011A–ATARM–04-Oct-10
DE CA
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