BT151S-650R NXP Semiconductors, BT151S-650R Datasheet - Page 2

• Manufacturer Part Number: BT151S-650R
• Description: Passivated thyristors in a SOT428 plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
3. Ordering information
Table 2.
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BT151S_SER_L_R_5
Product data sheet
Type number
BT151S-500L
BT151S-500R
BT151S-650L
BT151S-650R
BT151S-800R
Symbol
V
V
I
I
I
I
dI
I
V
P
P
T
T
T(AV)
T(RMS)
TSM
2
GM
stg
j
DRM
RRM
t
RGM
GM
G(AV)
T
/dt
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15A/ s.
Ordering information
Limiting values
Parameter
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
RMS on-state current
non-repetitive peak on-state
current
I
rate of rise of on-state current
peak gate current
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
Package
Name
DPAK
Description
plastic single-ended surface-mounted package; 3 leads (one lead cropped) SOT428
Conditions
BT151S-500L; BT151S-500R
BT151S-650L; BT151S-650R
BT151S-800R
BT151S-500L; BT151S-500R
BT151S-650L; BT151S-650R
BT151S-800R
half sine wave; T
see
all conduction angles; see
and
half sine wave; T
surge; see
t = 10 ms
I
dI
over any 20 ms period
TM
G
t = 10 ms
t = 8.3 ms
Rev. 05 — 9 October 2006
/dt = 50 mA/ s
= 20 A; I
Figure 1
5
Figure 2
G
= 50 mA;
mb
j
= 25 C prior to
and
103 C;
BT151S series L and R
3
Figure 4
[1]
[1]
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
40
Max
500
650
800
500
650
800
7.5
12
120
132
72
50
2
5
5
0.5
+150
125
© NXP B.V. 2006. All rights reserved.
Thyristors
Version
Unit
V
V
V
V
V
V
A
A
A
A
A
A/ s
A
V
W
W
C
C
2
s
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