EC103D1 NXP Semiconductors, EC103D1 Datasheet - Page 6

• Manufacturer Part Number: EC103D1
• Description: Planar passivated ultra sensitive gate Silicon Controlled Rectifier in a SOT54 (T0-92) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 5.
T
EC103D1_2
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
I
Dynamic characteristics
dV
t
t
GT
L
H
D
R
gt
q
j
T
GT
= 25 C unless otherwise stated.
D
/dt
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
reverse current
rate of rise of off-state
voltage
gate-controlled turn-on
time
commutated turn-off
time
Conditions
V
V
see
V
see
I
I
V
R
V
R
V
exponential waveform; R
see
I
dI
V
I
(dI
R
T
T
TM
TM
D
D
D
D
R
DM
DM
GK
GK
GK
G
V
V
= 1 A
= 10 mA; see
T
/dt = 0.1 A/ s
= 12 V; I
= 12 V; I
= 12 V; I
= V
= V
= 2 A; V
= 1.6 A; V
/dt)
D
D
Figure 10
Figure 11
Figure 12
= 1 k
= 1 k
= 0.67
= 0.67
= 1 k
= 12 V
= V
DRM(max)
RRM(max)
M
= 30 A/ s; dV
DRM(max)
T
GT
GT
D
Rev. 02 — 31 July 2008
= 0.1 A; see
V
= V
V
R
= 0.5 mA; R
= 0.5 mA; R
; T
; T
DRM(max)
DRM(max)
= 35 V;
Figure 7
DRM(max)
; T
j
j
= 125 C;
= 125 C;
j
= 125 C
D
; T
; T
/dt = 2 V/ s;
GK
; I
j
j
Figure 8
GK
GK
= 125 C;
= 125 C;
G
= 1 k ;
= 10 mA;
= 1 k ;
= 1 k ;
Min
-
-
-
-
-
0.2
-
-
-
-
-
Thyristor, sensitive gate
Typ
3
2
2
1.2
0.5
0.3
0.05
0.05
150
2
100
EC103D1
© NXP B.V. 2008. All rights reserved.
Max
12
6
5
1.35
0.8
-
0.1
0.1
-
-
-
Unit
mA
mA
V
V
V
mA
mA
V/ s
A
s
s
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