BYC10B-600 NXP Semiconductors, BYC10B-600 Datasheet - Page 4

• Manufacturer Part Number: BYC10B-600
• Description: Hyperfast power diode in a SOT404 (D2PAK) surface-mountable plastic package
• Manufacturer: NXP Semiconductors

March 2001
Rectifier diode
ultrafast, low switching loss
diode, as a function of rate of change of current dI
reverse recovery of diode, as a function of of change
Fig.3. Maximum forward dissipation as a function of
Fig.4. Typical reverse recovery switching losses in
8
7
6
5
4
3
2
1
0
Fig.5. Typical switching losses in transistor due to
30
25
20
15
10
0.25
0.15
0.05
100
5
0
0.2
0.1
Transistor losses due to diode reverse recovery, Ptsw (W)
Semiconductors
0
0
100
Forward dissipation, PF (W)
average forward current; rectangular current
BYC10-600
Vo = 1.3 V
Rs = 0.05 Ohms
20 A
Diode reverse recovery switching losses, Pdsw (W)
VR = 400 V
f = 20 kHz
Tj = 125 C
10 A
IF = 5 A
waveform where I
Rate of change of current, dIF/dt (A/us)
Rate of change of current, dIF/dt (A/us)
Average forward current, IF(AV) (A)
0.1
of current dI
5
20 A
0.2
IF = 5 A
BYC10-600
F(AV)
10 A
I
F
=I
/dt.
10
F(RMS)
0.5
t
p
T
D = 1.0
x √D.
Tmb(max) C
VR = 400 V
Tj = 125 C
f = 20 kHz
D =
t
T
p
t
15
1000
1000
90
100
110
120
130
140
150
F
/dt.
3
Fig.8. Typical peak reverse recovery current, I
Fig.7. Typical reverse recovery time t
Fig.6. Origin of switching losses in transistor due to
100
100
10
10
1
100
100
function of rate of change of current dI
Reverse recovery time, trr (ns)
Peak reverse recovery current, Irrm (A)
Tj = 125 C
VR = 400 V
Tj = 125 C
VR = 400 V
of rate of change of current dI
VD
Rate of change of current, dIF/dt (A/us)
ID
Rate of change of current, dIF/dt (A/us)
IF = 5 A
dIF/dt
diode reverse recovery.
20 A
20 A
IF = 5 A
Irrm
losses due to
diode reverse recovery
10 A
time
ID = IL
Product specification
BYC10B-600
rr
, as a function
F
/dt.
BYC10-600
BYC10-600
F
Rev 1.400
/dt.
rrm
1000
1000
as a