BYC10DX-600 NXP Semiconductors, BYC10DX-600 Datasheet - Page 3

• Manufacturer Part Number: BYC10DX-600
• Description: Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BYC10DX-600
Product data sheet
Symbol
V
V
V
I
I
I
T
T
F(AV)
FRM
FSM
Fig 1.
stg
j
RRM
RWM
R
P
(W)
tot
30
20
10
0
average forward current; square waveform;
maximum values
Forward power dissipation as a function of
0
Limiting values
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
repetitive peak forward current
non-repetitive peak forward current t
storage temperature
junction temperature
0.1
5
0.2
0.5
10
I
F(AV)
All information provided in this document is subject to legal disclaimers.
003aag301
(A)
δ = 1
square-wave pulse; δ = 0.5 ; t
15
Conditions
DC
square-wave pulse; δ = 0.5 ; T
see
T
see
t
see
p
p
h
Rev. 1 — 30 June 2011
= 10 ms; sine-wave pulse; T
= 8.3 ms; sine-wave pulse; T
= 41 °C
Figure
Figure 3
Figure 3
1; see
Fig 2.
P
(W)
Figure 2
tot
25
20
15
10
5
0
average forward current; sinusoidal waveform;
maximum values
Forward power dissipation as a function of
0
p
j(init)
h
2
j(init)
= 25 µs;
= 41 °C;
= 25 °C;
= 25 °C;
4.0
4
BYC10DX-600
2.8
6
Hyperfast power diode
2.2
Min
-
-
-
-
-
-
-
-40
-
1.9
© NXP B.V. 2011. All rights reserved.
8
003aag302
I
a = 1.57
F(AV)
600
600
500
Max
10
20
65
71
150
150
(A)
10
Unit
V
V
V
A
A
A
A
°C
°C
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