PMEG2015EA NXP Semiconductors, PMEG2015EA Datasheet - Page 2

• Manufacturer Part Number: PMEG2015EA
• Description: Planar Maximum Efficiency General Application (MEGA)Schottky barrier diode with an integrated guard ring forstress protection, encapsulated in a SOD323 (SC-76) verysmall SMD plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
FEATURES
• Forward current: 1.5 A
• Reverse voltage: 20 V
• Ultra high-speed switching
• Very low forward voltage
• Very small plastic SMD package.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode with an integrated guard ring for
stress protection, encapsulated in a SOD323 (SC-76) very
small SMD plastic package.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2004 Feb 03
PMEG2015EA
V
I
I
I
T
T
T
TYPE NUMBER
F
FSM
FRM
stg
j
amb
R
Low V
SYMBOL
F
(MEGA) Schottky barrier diode
continuous reverse voltage
continuous forward current
non-repetitive peak forward current
repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
NAME
−
PARAMETER
plastic surface mounted package; 2 leads
T
t
t
2
p
p
s
= 8 ms square wave
= 1 ms; δ = ≤ 0.25
DESCRIPTION
PINNING
< 55 °C
PACKAGE
Marking code: S5.
The marking bar indicates the cathode.
Fig.1
CONDITIONS
Simplified outline (SOD323; SC-76) and
symbol.
PIN
1
1
2
−
−
−
−
−65
−
−65
cathode
anode
MIN.
2
PMEG2015EA
DESCRIPTION
Product data sheet
20
1.5
10
4.5
+150
125
+125
MAX.
1
sym001
VERSION
SOD323
2
V
A
A
A
°C
°C
°C
UNIT