PMEG4010ER NXP Semiconductors, PMEG4010ER Datasheet - Page 7

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD123W small and flatlead Surface-Mounted Device (SMD) plastic package

PMEG4010ER

Manufacturer Part Number
PMEG4010ER
Description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD123W small and flatlead Surface-Mounted Device (SMD) plastic package
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
PMEG4010ER_2
Product data sheet
Fig 7.
Fig 9.
P
I
F(AV)
F(AV)
(W)
(A)
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
0.6
0.4
0.2
1.6
1.2
0.8
0.4
0
0
0
T
Average forward power dissipation as a
function of average forward current; typical
values
0
FR4 PCB, standard footprint
T
ambient temperature; typical values
Average forward current as a function of
j
j
= 150 °C
= 150 °C
25
0.4
(1)
50
(1)
(2)
(3)
(4)
(2)
75
0.8
100
(3)
125
1.2
T
I
All information provided in this document is subject to legal disclaimers.
amb
F(AV)
006aab368
006aab370
150
(4)
(°C)
(A)
175
1.6
Rev. 02 — 15 April 2010
Fig 8.
Fig 10. Average forward current as a function of
P
I
F(AV)
R(AV)
(W)
(A)
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
0.3
0.2
0.1
1.6
1.2
0.8
0.4
0
0
0
0
T
Average reverse power dissipation as a
function of reverse voltage; typical values
FR4 PCB, mounting pad for cathode 1 cm
T
ambient temperature; typical values
1 A low V
j
j
= 125 °C
= 150 °C
25
10
(1)
(2)
(3)
(4)
50
F
MEGA Schottky barrier rectifier
75
PMEG4010ER
20
(1)
(2)
(3)
100
125
30
© NXP B.V. 2010. All rights reserved.
T
amb
006aab369
V
006aab371
150
R
(4)
(°C)
(V)
2
175
40
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