BAS28 NXP Semiconductors, BAS28 Datasheet - Page 3

The BAS28 consists of twohigh-speed switching diodes,fabricated in planar technology, andencapsulated in the small plasticSMD SOT143 package

BAS28

Manufacturer Part Number
BAS28
Description
The BAS28 consists of twohigh-speed switching diodes,fabricated in planar technology, andencapsulated in the small plasticSMD SOT143 package
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
5. Limiting values
6. Thermal characteristics
BAS28
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Table 6.
[1]
Symbol
Per diode
V
V
I
I
I
Per device
P
T
T
Symbol
Per device; one diode loaded
R
R
F
FRM
FSM
j
stg
RRM
R
tot
th(j-a)
th(j-t)
Device mounted on an FR4 PCB.
One diode loaded.
T
Device mounted on an FR4 PCB.
j
= 25 °C prior to surge.
Limiting values
Thermal characteristics
Parameter
repetitive peak
reverse voltage
reverse voltage
forward current
repetitive peak
forward current
non-repetitive peak
forward current
total power dissipation
junction temperature
storage temperature
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to tie-point
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 22 July 2010
Conditions
square wave
T
Conditions
in free air
amb
t
t
t
p
p
p
= 1 μs
= 1 ms
= 1 s
= 25 °C
[1][2]
[1]
[3]
[1]
High-speed double diode
Min
-
-
-
-
-
-
-
-
-
−65
Min
-
-
Typ
-
-
© NXP B.V. 2010. All rights reserved.
Max
85
75
215
500
4
1
0.5
250
150
+150
BAS28
Max
500
360
Unit
V
V
mA
mA
A
A
A
mW
°C
°C
Unit
K/W
K/W
3 of 12

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