BUK626R2-40C NXP Semiconductors, BUK626R2-40C Datasheet - Page 8

• Manufacturer Part Number: BUK626R2-40C
• Description: Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK626R2-40C
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
V
GS(th)
(V)
DSon
20
15
10
4
3
2
1
0
5
0
-60
junction temperature
of drain current; typical values
Gate-source threshold voltage as a function of
0
3.8
0
4.0
50
max
min
typ
60
4.5
100
120
V
GS
All information provided in this document is subject to legal disclaimers.
I
D
003aad805
(V) = 10
003aae725
T
(A)
j
(°C)
5.0
8.0
6.0
150
180
Rev. 1 — 12 July 2011
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
I
10
D
10
10
10
10
10
a
2.5
1.5
0.5
N-channel TrenchMOS intermediate level FET
-1
-2
-3
-4
-5
-6
2
1
0
-60
gate-source voltage
factor as a function of junction temperature
0
1
0
BUK626R2-40C
min
60
2
typ
max
120
3
© NXP B.V. 2011. All rights reserved.
003aad806
V
003aad793
T
GS
j
(°C)
(V)
180
4
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