BUK7508-40B NXP Semiconductors, BUK7508-40B Datasheet - Page 9

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7508-40B

Manufacturer Part Number
BUK7508-40B
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
BUK7508-40B
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Part Number:
BUK7508-40B
Manufacturer:
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Quantity:
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NXP Semiconductors
BUK7508-40B
Product data sheet
Fig 13. Gate-source voltage as a function of turn-on
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
V
(V)
GS
10
8
6
4
2
0
gate charge; typical values
0
10
V
DD
20
= 14 V
(A)
I
S
100
V
75
50
25
DD
30
0
0.0
All information provided in this document is subject to legal disclaimers.
= 32 V
Q
003aac072
G
(nC)
40
Rev. 05 — 24 March 2011
0.3
T
j
= 175 °C
0.6
Fig 14. Input, output and reverse transfer capacitances
(pF)
3000
2000
1000
C
0.9
0
10
25 °C
as a function of drain-source voltage; typical
values
−2
V
N-channel TrenchMOS standard level FET
003aac071
SD
(V)
1.2
10
−1
BUK7508-40B
1
C
C
C
oss
iss
rss
10
© NXP B.V. 2011. All rights reserved.
V
003aac078
DS
(V)
10
2
9 of 14

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