BUK9606-75B NXP Semiconductors, BUK9606-75B Datasheet

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK9606-75B

Manufacturer Part Number
BUK9606-75B
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
P
Static characteristics
R
V
I
D
DS
tot
DSon
BUK9606-75B
N-channel TrenchMOS logic level FET
Rev. 4 — 20 July 2011
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
12 V, 24 V and 42 V loads
Automotive systems
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
Conditions
T
V
see
T
V
T
V
T
see
j
mb
j
j
GS
GS
GS
≥ 25 °C; T
= 25 °C
= 25 °C;
Figure
Figure
= 25 °C; see
= 5 V; T
= 10 V; I
= 5 V; I
11; see
1; see
D
j
mb
D
≤ 175 °C
= 25 A;
= 25 A;
= 25 °C;
Figure 2
Figure 3
Figure 12
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
General purpose power switching
Motors, lamps and solenoids
[1]
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
4.7
5.2
Max
75
75
300
5.5
6.1
Unit
V
A
W
mΩ
mΩ

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BUK9606-75B Summary of contents

Page 1

... BUK9606-75B N-channel TrenchMOS logic level FET Rev. 4 — 20 July 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 July 2011 BUK9606-75B N-channel TrenchMOS logic level FET Min Typ ≤ sup = ...

Page 3

... °C; unclamped GS j(init) 03nh76 120 P der (%) 150 175 200 T (°C) mb Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 July 2011 BUK9606-75B N-channel TrenchMOS logic level FET Min - - -15 [1] Figure 1 - [2] Figure 1; - [1] - ≤ 10 µ -55 -55 ...

Page 4

... Conditions see Figure 4 mounted on a printed circuit board; minimum footprint −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 July 2011 BUK9606-75B N-channel TrenchMOS logic level FET =10 μ 100 μ 100 (V) ...

Page 5

... °C j from source lead to source bond pad °C j All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 July 2011 BUK9606-75B N-channel TrenchMOS logic level FET Min Typ Max 1.1 1 ...

Page 6

... V (V) DS Fig 6. 03ng53 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 July 2011 BUK9606-75B N-channel TrenchMOS logic level FET Min - - = 25 ° DSon (mΩ Drain-source on-state resistance as a function of gate-source voltages ...

Page 7

... Fig 10. Gate-source threshold voltage as a function of 03ng85 3.6 3 200 300 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 July 2011 BUK9606-75B N-channel TrenchMOS logic level FET 2.5 (V) 2.0 max 1.5 typ min 1.0 0.5 0 − junction temperature 2 ...

Page 8

... Fig 14. Input, output and reverse transfer capacitances 100 175 ° 0.0 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 July 2011 BUK9606-75B N-channel TrenchMOS logic level FET 14000 12000 C iss 10000 8000 C oss 6000 4000 C rss 2000 0 − function of drain-source voltage ...

Page 9

... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 July 2011 BUK9606-75B N-channel TrenchMOS logic level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2011. All rights reserved. SOT404 ...

Page 10

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK9606-75B v.4 20110720 • Modifications: Various changes to content. BUK9606-75B v.3 20110207 BUK9606-75B Product data sheet Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. ...

Page 11

... Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 July 2011 BUK9606-75B N-channel TrenchMOS logic level FET © NXP B.V. 2011. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 July 2011 BUK9606-75B N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 20 July 2011 Document identifier: BUK9606-75B ...

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