BSS84 NXP Semiconductors, BSS84 Datasheet - Page 3

• Manufacturer Part Number: BSS84
• Description: Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Limiting values
BSS84_6
Product data sheet
Fig 1.
(mA)
I
D
10
10
10
1
3
2
T
(1) R
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
1
sp
= 25 C
DSon
limitation
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Symbol
V
V
I
I
P
T
T
D
DM
stg
j
DS
GS
tot
Device mounted on a Printed-Circuit Board (PCB).
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
Limiting values
(1)
Rev. 06 — 16 December 2008
P-channel enhancement mode vertical DMOS transistor
10
Conditions
25 C
T
see
T
V
T
see
T
sp
sp
sp
sp
GS
DC
= 25 C; V
= 100 C;
= 25 C; t
= 25 C; see
Figure 1
Figure 1
= 10 V
T
j
150 C
p
GS
10 s;
Figure 2
= 10 V;
V
DS
(V)
[1]
Min
-
-
-
-
-
-
65
65
10 s
100 s
1 ms
10 ms
100 ms
t
p
=
© NXP B.V. 2008. All rights reserved.
Max
250
+150
+150
50
20
130
75
520
BSS84
mld251
10
2
Unit
V
V
mA
mA
mA
mW
C
C
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